Maskless Photolithography Light Guide Emission Points

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Solution Overview

Problem

Photolithography faces challenges in accurately registering features across wide areas, particularly in building devices with multiple layers, due to limitations in registration between layers and registration area limitations, which affects the precise deposition of materials like metallic layers on sub-micron scale optical features.

Innovation Solution

A device comprising a light source and a light guide with emission points that emit photoresist-curable electromagnetic radiation, such as UV light, by frustrating total internal reflection, allowing for precise exposure and patterning of photoresist on a substrate, enabling accurate registration of nanoscale features across large areas.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If a patterned photomask is used for photolithography exposure, then the photoresist can be accurately patterned, but registration between multiple layers becomes difficult and the registration area is limited

Engineering Contradiction:
Improvephotoresist patterning accuracyVSAvoidlayer registration accuracy
Core Design Contradiction:
Manufacturing precisionVSReliability

Solution Approach 1:

The patent uses a photomaskless approach where the pattern is directly written onto the photoresist using a focused light source and computational algorithms, eliminating the physical photomask. This digital copying method allows for precise pattern transfer without the registration limitations of physical masks, enabling accurate alignment across multiple layers through software-based coordinate transformation and field stitching

Inventive Principle:
Principle #26Copying

Solution Approach 2:

The system dynamically adjusts exposure parameters, light source positioning, and pattern generation in real-time during the photolithography process. The light source can be moved and repositioned dynamically to write patterns across the entire substrate area, and the system adapts to different layer requirements by dynamically changing exposure conditions and pattern data for each layer

Inventive Principle:
Principle #15Dynamics

2Adaptability or versatility

If a new layer is added to a device with multiple layers, then device functionality is enhanced, but registration of features with the top layer becomes increasingly difficult

Engineering Contradiction:
Improvedevice layer complexityVSAvoidfeature registration accuracy
Core Design Contradiction:
Adaptability or versatilityVSManufacturing precision

Solution Approach 1:

The patent divides the exposure process into multiple fields that are stitched together to cover the entire substrate area. Each field can be independently optimized for registration with the top layer, and the computational system integrates these segmented exposures into a complete pattern. This segmentation allows each layer to be addressed independently while maintaining overall registration accuracy

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The patent replaces the mechanical photomask alignment system with a computational approach that uses software-based pattern generation and coordinate transformation. This eliminates mechanical registration limitations and allows for precise alignment of multiple layers through digital calculations and adaptive pattern adjustment

Inventive Principle:
Principle #28Mechanics substitution (Replace mechanical system)

3Manufacturing precision

If photolithography is used to deposit sub-micron scale features, then device precision is improved, but the registration area is limited

Engineering Contradiction:
Improvesub-micron feature precisionVSAvoidregistration area
Core Design Contradiction:
Manufacturing precisionVSArea of stationary object

Solution Approach 1:

The patent extends the registration capability from two-dimensional mask patterns to three-dimensional spatial control of the light source. By controlling the light source position, angle, and focal point in three dimensions, the system can write high-precision patterns across the entire substrate area, overcoming the area limitations of flat photomasks

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This solution enhances the ability to register nanoscale features across wide areas, improving the precision of material deposition and overcoming registration limitations in multi-layer device fabrication, enabling the creation of complex patterns and structures.

Implementation Method 1

The light guide is arranged to receive the photoresist-curative electromagnetic radiation from the light source and to guide the received radiation by total internal reflection

Methodology Applied
Scientific EffectTotal internal reflection: Total Internal Reflection

Implementation Method 2

the emission points emitting the photoresist-curative electromagnetic radiation out of the light guide by frustration of total internal reflection caused by the emission points

Methodology Applied
Scientific EffectFrustration of total internal reflection: Total Internal Reflection

Implementation Method 3

The light exposed photoresist is then developed to create patterned photoresist with voids therein

Methodology Applied
Scientific EffectPhotopolymerization: Photopolymerisation

Data Source

PatentUS11567411B2Maskless photolithography devices, methods, and systems
Publication Date: 2023.01.31 NANOPATH INC
  • US11567411B2 patent drawing
  • US11567411B2 patent drawing
  • US11567411B2 patent drawing

AI summary

A device (100) includes a light source (130) and a light guide (110). The light source (130) is configured to emit photoresist-curative electromagnetic radiation. The light guide (110) is arranged to receive the photoresist-curative electromagnetic radiation from the light source (130) and to guide the received radiation by total internal reflection, the light guide (110) including a pattern of emission points (210) on at least one surface of the light guide (110), the emission points (210) emitting the photoresist-curative electromagnetic radiation out of the light guide (110) by frustration of total internal reflection caused by the emission points (210).