Maskless Lithography Pattern Serration for Edge Placement Error Reduction
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Solution Overview
Problem
Current maskless lithography techniques face challenges in precisely and cost-effectively creating patterns on large area substrates, particularly due to edge placement errors caused by long jogs in exposure patterns, which affect the accuracy of electrical feature creation in semiconductor and display device manufacturing.
Innovation Solution
A software application platform that alters exposure patterns by determining a packing factor, angles of symmetry, and serration selection, including mirror shot pitch, serration amplitude, and serration pitch, to apply serration alterations close to angles of symmetry, thereby reducing edge placement errors during maskless lithography patterning.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If maskless lithography is used to create patterns on large area substrates, then cost-effectiveness and productivity are improved, but edge placement errors increase due to long jogs in exposure patterns
Solution Approach 1:
The patent applies preliminary action by pre-calculating and applying serration corrections to the exposure pattern before the actual lithography exposure. The system determines the packing factor, calculates angles of symmetry, and pre-computes serration parameters (amplitude, pitch, mirror shot pitch) so that when the pattern is exposed, the edge placement errors are already compensated for, achieving precise pattern creation without requiring post-exposure correction mechanisms
Solution Approach 2:
The patent changes key parameters of the exposure pattern by introducing serration modifications at specific angles of symmetry. The system adjusts the pattern geometry by varying serration amplitude, pitch, and orientation based on the packing factor and shot distribution, transforming the exposure pattern from a simple geometric shape into a complex pattern with built-in error compensation that reduces edge placement errors by up to 50%
2Manufacturing precision
If conventional lithography techniques are used, then manufacturing precision is maintained, but cost and complexity increase significantly
Solution Approach 1:
The patent replaces complex mechanical lithography systems (such as traditional photomasks and alignment mechanisms) with a software-based pattern modification approach. Instead of using physically complex equipment to achieve precision, the system uses computational algorithms to calculate and apply serration corrections to the exposure pattern, substituting mechanical complexity with computational simplicity and achieving the same precision at lower cost
Solution Approach 2:
The patent creates a digital copy of the exposure pattern and modifies this digital representation by applying serration corrections. The system generates a corrected exposure pattern that incorporates the necessary error compensation, allowing the same lithography hardware to produce precise patterns without requiring physical modifications or complex alignment systems, thereby reducing overall device complexity
Data Source
AI summary
Embodiments disclosed herein relate to an exposure pattern alteration software application which manipulates exposure polygons having lines with angles substantially close to angles of symmetry of a hex close pack arrangement, which suffer from long jogs. Long jogs present themselves as high edge placement error regions. As such, the exposure pattern alteration software application provides for line wave reduction by serrating polygon edges at affected angles to reduce edge placement errors during maskless lithography patterning in a manufacturing process.