Maskless Micro Pattern Formation Using Multi-Height Resist
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Conventional photolithography processes for forming thin films in semiconductor and display devices are limited by the need for masks and exposure equipment, which restrict the formation of micro patterns and can damage adjacent regions during the etching process.
Innovation Solution
A method involving a resist portion with multiple regions of different heights on a substrate, where each region is sequentially exposed and removed using protection layers to form thin films without the need for masks or exposure processes, allowing for the formation of micro-patterned thin films.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional photolithography process with masks and exposure equipment is used, then thin films can be formed, but the formation of micro patterns is restricted and adjacent regions may be damaged during etching
Solution Approach 1:
The resist portion is divided into multiple regions with different heights (first region, second region, third region) corresponding to different pixel electrodes. Each region has a different upper surface height, allowing selective exposure and removal to form precise micro patterns without affecting adjacent regions.
Solution Approach 2:
The invention introduces height dimension to the resist portion by forming regions at different elevations. This vertical differentiation allows for selective processing of different areas without cross-contamination, eliminating the need for masks and exposure equipment while achieving precise micro pattern formation.
2Ease of manufacture
If masks and exposure equipment are used for photolithography, then thin films can be formed, but the process complexity increases
Solution Approach 1:
The invention extracts and eliminates the need for masks and exposure equipment from the photolithography process. By using a multi-height resist structure with selective removal, the process achieves thin film formation without requiring complex mask-making and exposure equipment.
Solution Approach 2:
The resist portion structure itself serves as the patterning tool through its inherent height differences. Each region's different height enables self-selective exposure and removal, making the resist structure self-sufficient for pattern formation without external mask assistance.
Data Source
AI summary
A method of forming a thin film, the method including: disposing a resist portion on a substrate, the resist portion including: a first region including a first upper surface; and a second region including a second upper surface, the first upper surface disposed higher than the second upper surface and forming a step; disposing a first protection layer covering the resist portion; exposing the first upper surface; removing the first region; disposing a first thin film on the substrate; disposing a second protection layer covering the first thin film; exposing the second upper surface; removing the second region; disposing a second thin film on the substrate; and removing the first protection layer and the second protection layer.