Selective Epitaxy Maskless Growth for Optoelectronic Chips
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Solution Overview
Problem
The existing methods for producing optoelectronic semiconductor chips using selective epitaxy are complex and costly due to the need for a mask layer and separate photolithography and etching processes.
Innovation Solution
A method where a non-closed mask material layer with statistically distributed windows is grown in situ, allowing semiconductor layers to be grown simultaneously on the chip composite base without the need for additional mask layers, simplifying the process and enabling the growth of semiconductor layers and mask layers in a single reactor.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If selective epitaxy with mask layer and photolithography is used, then semiconductor layers can be grown selectively, but the production process becomes complex and costly
Solution Approach 1:
The patent extracts and eliminates the mask layer and photolithography steps from the selective epitaxy process. Instead of using a separate mask layer that requires deposition and removal, the method directly grows semiconductor material only in desired locations through controlled epitaxial growth conditions, removing unnecessary process steps while maintaining selective growth capability
Solution Approach 2:
The patent merges the mask layer formation and semiconductor layer growth into a single epitaxial growth step. The mask pattern and semiconductor structures are created simultaneously in one reactor without separate photolithography and etching steps, simplifying the overall production process while achieving the same selective patterning result
2Manufacturing precision
If separate photolithography and etching installations are used, then precise patterning can be achieved, but the production cost and process time increase
Solution Approach 1:
The patent combines multiple separate process steps (mask layer deposition, photolithography, etching, and semiconductor layer growth) into a single epitaxial growth process. This integration is performed in one reactor system, eliminating the need for separate installations and reducing both production time and cost while maintaining precise patterning through controlled growth conditions
Solution Approach 2:
The epitaxial growth reactor is designed to perform multiple functions simultaneously: it creates the mask pattern, defines the semiconductor structure geometry, and grows the semiconductor layers all in one process. This multi-functionality eliminates the need for specialized separate installations for each process step, improving productivity and reducing capital equipment requirements
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method simplifies and cost-reduces the production of optoelectronic semiconductor chips by eliminating the need for separate mask layer growth and photolithography, enabling efficient growth of semiconductor layers with improved radiation coupling-out capabilities.
Implementation Method 1
A non-closed mask material layer is grown onto the growth surface in such a way that the mask material layer has a plurality of statistically distributed windows
Implementation Method 2
Semiconductor layers are grown essentially simultaneously on regions of the growth surface that lie within the windows
Data Source
AI summary
A method for the production of a plurality of optoelectronic semiconductor chips each having a plurality of structural elements with respectively at least one semiconductor layer. The method involves providing a chip composite base having a substrate and a growth surface. A non-closed mask material layer is grown onto the growth surface in such a way that the mask material layer has a plurality of statistically distributed windows having varying forms and/or opening areas, a mask material being chosen in such a way that a semiconductor material of the semiconductor layer that is to be grown in a later method step essentially cannot grow on said mask material or can grow in a substantially worse manner in comparison with the growth surface. Subsequently, semiconductor layers are deposited essentially simultaneously onto regions of the growth surface that lie within the windows. A further method step is singulation of the chip composite base with applied material to form semiconductor chips. An optoelectronic semiconductor component is produced according to the method.