Maskless Vapor Deposition for OLED Thin Film Formation

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Solution Overview

Problem

The formation accuracy of thin films in OLED display devices is compromised due to processing inaccuracies and deformation of fine masks used in vapor deposition, necessitating a method to deposit materials without relying on these masks.

Innovation Solution

A deposition method and device that utilize a processing substrate with a rib and partition structure, where vapor deposition heads emit materials at controlled angles to precisely deposit layers on the substrate, allowing for accurate thin film formation without the need for fine masks.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If a fine mask with an aperture corresponding to each pixel is applied for vapor deposition, then the organic layer can be deposited in desired areas, but the formation accuracy deteriorates due to processing accuracy of the fine mask and deformation of the aperture shape

Engineering Contradiction:
Improveformation accuracy of thin filmVSAvoidfine mask processing complexity
Core Design Contradiction:
Manufacturing precisionVSDevice complexity

Solution Approach 1:

The patent extracts and eliminates the fine mask component from the vapor deposition process. By removing the mask entirely and using direct vapor deposition with controlled source positioning, the invention avoids all processing inaccuracies and deformation issues associated with fine mask fabrication and handling, thereby improving thin film formation accuracy without mask-related complexity

Inventive Principle:
Principle #2Taking out (Extraction)

Solution Approach 2:

The patent replaces the mechanical mask system with a vapor deposition system that uses controlled material emission from a deposition source. Instead of using a physical mask to define patterns, the invention uses precise positioning and controlled vapor distribution to achieve the desired film formation, substituting a mechanical approach with a vapor-phase process

Inventive Principle:
Principle #28Mechanics substitution (Replace mechanical system)

2Measurement precision

If a fine mask is applied for vapor deposition, then material can be deposited in desired areas, but aperture shape deformation occurs reducing deposition precision

Engineering Contradiction:
Improveaperture shape accuracyVSAvoidaperture shape stability
Core Design Contradiction:
Measurement precisionVSStability of the object's composition

Solution Approach 1:

The patent removes the mask component entirely from the deposition system, eliminating the source of aperture shape deformation. By using direct vapor deposition with controlled emission from the deposition source, the invention maintains aperture shape accuracy without the instability inherent in fine mask structures

Inventive Principle:
Principle #2Taking out (Extraction)

Solution Approach 2:

The patent changes the deposition approach from mask-based physical blocking to vapor-phase material emission with controlled distribution. By adjusting vapor deposition parameters such as source-to-substrate distance, deposition rate, and vapor angle, the invention achieves precise material placement without relying on mask aperture stability

Inventive Principle:
Principle #35Parameter changes

3Manufacturing precision

If fine masks are used for each pixel, then organic layer deposition can be controlled, but processing time and complexity increase

Engineering Contradiction:
Improveorganic layer deposition controlVSAvoiddeposition processing efficiency
Core Design Contradiction:
Manufacturing precisionVSProductivity

Solution Approach 1:

The patent merges the functions of multiple fine masks into a single vapor deposition process. By using a deposition source that can emit material with controlled spatial distribution, the invention combines what would require multiple mask applications into one efficient process, improving productivity while maintaining organic layer deposition control

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The patent replaces the mechanical mask application and alignment process with a vapor deposition system that achieves pattern control through controlled material emission. This substitution eliminates the time-consuming mask handling and positioning steps, significantly improving processing efficiency while maintaining precise organic layer formation

Inventive Principle:
Principle #28Mechanics substitution (Replace mechanical system)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach enables the formation of thin films with improved accuracy and position control, enhancing the aperture ratio and pixel resolution of OLED displays while eliminating the reliance on fine masks.

Implementation Method 1

a deposition source heating a material to generate vapor; and a nozzle connected to the deposition source to emit the vapor generated by the deposition source

Methodology Applied
Scientific EffectVapor deposition: Physical Vapour Deposition

Data Source

PatentUS20240207891A1Deposition device and deposition method
Publication Date: 2024.06.27 APPLIED MATERIALS INC
  • US20240207891A1 patent drawing
  • US20240207891A1 patent drawing
  • US20240207891A1 patent drawing

AI summary

According to one embodiment, a deposition method includes preparing a processing substrate in which a lower electrode, a rib, and a partition including a lower portion and an upper portion arranged on the lower portion and protruding from a side surface of the lower portion are formed above a substrate, setting a spread angle of vapor of a first material emitted from a first deposition head to a first angle, and depositing the first material on the processing substrate, and setting a spread angle of vapor of a second material emitted from a second deposition head to a second angle larger than the first angle, and depositing the second material on the processing substrate on which the first material is deposited.