3D Semiconductor Package With Matched Interconnect Layers
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Solution Overview
Problem
Current 3D IC integration faces limitations due to asymmetries in interconnect dimensions between transistors and through-silicon vias (TSVs), as well as between different layers and components in the IC, interposer, and PCB, hindering density and granularity, and requiring holistic IC-package-system co-design for optimal performance, power, area, and cost (PPAC) optimization per cubic millimeter.
Innovation Solution
The solution involves adopting finer-pitch hybrid bonding and via-last integration techniques for denser 3D IC stacking, replacing traditional flip chip bonding, and using advanced dielectric and conductive materials to bridge the interconnect divides between IC, interposer, laminate substrate, and PCB, enabling continuous scaling of interconnect dimensions and creating novel, dense 3D ICs and packages.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If traditional flip chip bonding is used for 3D IC integration, then the bonding process is simpler and more established, but the interconnect pitch is larger and integration density is lower
Solution Approach 1:
The patent applies parameter changes by transitioning from traditional flip chip bonding to finer-pitch hybrid bonding, changing the bonding parameters including pitch, temperature, and material composition. This enables smaller interconnect dimensions and higher integration density while managing the increased process complexity through systematic parameter optimization
Solution Approach 2:
The patent employs composite materials in the hybrid bonding approach, combining different dielectric and conductive materials with tailored properties. This allows achieving the desired fine pitch and performance characteristics by selecting and combining materials with specific electrical, thermal, and mechanical properties
2Quantity of substance
If asymmetric interconnect dimensions are used between transistors and TSVs, then manufacturing is easier, but density and granularity are limited
Solution Approach 1:
The patent applies local quality by creating symmetric interconnect dimensions at specific critical locations (bond interfaces) while maintaining asymmetric dimensions elsewhere where manufacturing ease is prioritized. This localized symmetry enables higher density at the bonding interface without requiring complete symmetry throughout the entire interconnect structure
Solution Approach 2:
The patent addresses the symmetry-density contradiction by moving to 3D stacking architectures, where vertical integration in the third dimension compensates for the constraints of interconnect symmetry. This dimensional transition allows achieving high density through vertical stacking rather than relying solely on planar symmetry
3Adaptability or versatility
If more substrate layers are used for 3D IC packaging, then functionality and interconnect capacity increase, but substrate size and cost increase
Solution Approach 1:
The patent applies the nesting principle by implementing 3D stacking of multiple IC layers and functional blocks vertically on the substrate. This nested arrangement allows multiple functional layers to occupy the same footprint area, increasing functionality and interconnect capacity without proportionally increasing substrate size
Solution Approach 2:
The patent transitions from 2D substrate expansion to 3D vertical stacking, utilizing the vertical dimension to accommodate additional functional layers and interconnect structures. This dimensional change enables high functionality with compact substrate footprint by stacking components vertically rather than spreading them horizontally
Data Source
AI summary
A semiconductor package is provided. The semiconductor package includes an integrated circuit (IC) block and a first substrate. The IC block has a first interconnect layer. The first substrate carries the IC block. The first substrate includes a second interconnect layer facing the first interconnect layer and a third interconnect layer opposite to the second interconnect layer. Furthermore, at least one of the second interconnect layer or the third interconnect layer is composed of a dielectric material and a conductive material substantially identical to a corresponding dielectric material and a corresponding conductive material of the first interconnect layer.