Material Layer Deposition with Adsorption Inhibitors for Step Coverage
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Solution Overview
Problem
The challenge lies in forming a material layer with excellent step coverage on complex structures with high aspect ratios in semiconductor devices, which is crucial for achieving high reliability and excellent electrical properties, as existing methods often result in voids and inadequate electrical properties.
Innovation Solution
A method involving a deposition cycle that includes providing an adsorption inhibitor, purging excess inhibitor, supplying a metal precursor, and reacting to form a material layer, where the adsorption inhibitor can include elements like nitrogen, oxygen, phosphorus, or sulfur, to ensure uniform deposition even on high-aspect-ratio surfaces.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional deposition methods are used on high aspect ratio structures, then the deposition process is simple, but the step coverage is poor and voids are formed
Solution Approach 1:
The adsorption inhibitor is supplied before the metal precursor to pre-modify the substrate surface. This preliminary action creates a controlled surface environment that directs subsequent metal precursor deposition, ensuring uniform step coverage on high aspect ratio structures without requiring complex deposition equipment or multiple processing steps.
Solution Approach 2:
The adsorption inhibitor acts as an intermediary substance between the substrate and the metal precursor. It temporarily modifies the substrate surface properties, enabling controlled metal precursor adsorption and subsequent uniform material layer formation, thereby achieving excellent step coverage while maintaining process simplicity.
2Manufacturing precision
If adsorption inhibitor is supplied to improve step coverage, then uniform deposition is achieved, but additional process steps are required
Solution Approach 1:
The deposition process uses periodic pulsing where the adsorption inhibitor is supplied for a specific duration, then purged, followed by metal precursor supply and purge cycles. This periodic action pattern allows each substance to be supplied and removed in controlled intervals, achieving uniform deposition while managing the overall cycle time efficiently through rhythmic process steps.
Solution Approach 2:
The process controls deposition uniformity by adjusting parameters such as the supply duration, purge duration, and timing of adsorption inhibitor and metal precursor. By optimizing these temporal and concentration parameters, uniform material layers are formed on high aspect ratio structures while minimizing the total deposition cycle time.
3Manufacturing precision
If excess adsorption inhibitor remains on substrate, then surface coverage is high, but electrical properties deteriorate
Solution Approach 1:
The process explicitly extracts or removes the excess adsorption inhibitor from the substrate surface through a dedicated purge step between inhibitor supply and metal precursor supply. This extraction ensures that only the necessary amount of inhibitor remains to control deposition, while excess inhibitor is eliminated to prevent electrical property deterioration.
Solution Approach 2:
The purge step rapidly removes excess adsorption inhibitor from the reaction chamber and substrate surface. This quick removal action skips the potential harm of leaving excess inhibitor on the surface, transitioning the system from a high-coverage state to an optimal state for subsequent metal precursor deposition and electrical performance.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances step coverage and electrical properties by uniformly forming material layers on complex structures, improving reliability and reducing voids, thereby achieving better performance in semiconductor devices.
Implementation Method 1
providing an adsorption inhibitor on a substrate
Implementation Method 2
providing a metal precursor on the substrate
Implementation Method 3
providing a metal precursor on the substrate
Implementation Method 4
supplying a reactant to form a material layer on the substrate
Data Source
AI summary
Methods of forming a material layer according to some embodiments of the inventive concept may include a deposition cycle including providing an adsorption inhibitor on a substrate, purging an excess amount of the adsorption inhibitor, providing a metal precursor on the substrate, purging an excess amount of the metal precursor, and supplying a reactant to form a material layer on the substrate. The adsorption inhibitor may include a group 15 element or a group 16 element.