High-Frequency Matrix Converter With Center-Tapped Isolation

The bidirectional power device is segmented into two separate unidirectional power devices (MOSFETs or IGBTs) with anti-parallel diodes. Each device handles one power direction, eliminating the need for high on-state resistance bidirectional devices. The segmentation allows selection of optimal unidirectional devices for each direction, reducing overall conduction losses.

Two unidirectional power devices are combined to achieve bidirectional power capability. The devices are connected in parallel with anti-parallel diodes, creating a composite bidirectional switch that leverages the low on-state resistance of each unidirectional device in its respective conduction direction.

The complex bidirectional device is segmented into simpler unidirectional devices with anti-parallel diodes. This segmentation simplifies the commutation control logic, as each unidirectional device has well-defined conduction characteristics and standard commutation procedures, reducing the risk of commutation failures.

Standard unidirectional power devices with anti-parallel diodes are used instead of expensive, complex bidirectional devices. These standard devices have well-established commutation methods and lower failure rates, improving system reliability despite requiring multiple components.

The series connection that introduces additional on-resistance is avoided by segmenting the bidirectional function into parallel-connected unidirectional devices. Each device operates independently in its optimal conduction direction, eliminating the cumulative on-resistance of series connections.

Instead of connecting devices in series (common source/drain) to achieve bidirectionality, the invention inverts the connection approach by using parallel connection with anti-parallel diodes. This inversion allows current to flow through the low-resistance path of the appropriate device in each direction, minimizing total on-resistance.