Silicon MCZ Wafer Oxidation and Pt Doping for Defect Control
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Solution Overview
Problem
Semiconductor devices manufactured using silicon MCZ wafers often suffer from crystal defects like COPs and slip lines, leading to enhanced leakage currents and weakened gate dielectrics, which are not effectively addressed by current manufacturing methods.
Innovation Solution
A method involving an oxidation process at specific high temperatures followed by the introduction of platinum into the silicon MCZ semiconductor body to dissolve COPs and manage slip lines, while forming a drift region with controlled oxygen concentration and platinum distribution.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If conventional manufacturing methods are used on silicon MCZ wafers, then production cost is reduced and wafer size is increased, but crystal defects such as COPs and slip lines are formed leading to enhanced leakage current and weakened gate dielectrics
Solution Approach 1:
The patent applies preliminary action by performing a specific oxidation treatment at 1120-1220°C before device fabrication to dissolve COPs and reduce slip lines in the silicon MCZ wafer. This pre-treatment eliminates crystal defects that would otherwise cause leakage currents and gate dielectric weaknesses, enabling reliable manufacturing on large-diameter MCZ wafers
Solution Approach 2:
The patent changes the oxidation temperature parameter to a specific range (1120-1220°C) to achieve optimal dissolution of COPs while maintaining wafer integrity. This parameter optimization resolves the contradiction by enabling defect removal without compromising the benefits of using large-diameter MCZ wafers
2Ease of manufacture
If conventional manufacturing methods are used on silicon MCZ wafers, then production cost is reduced, but gate dielectric strength is weakened due to crystal defects
Solution Approach 1:
The oxidation treatment at 1120-1220°C is performed as a preliminary step to strengthen gate dielectric attachment by removing COPs and reducing slip lines. This pre-treatment ensures strong gate dielectric formation while maintaining the cost advantages of using silicon MCZ wafers
Solution Approach 2:
The patent converts the potentially harmful high-temperature oxidation process into a beneficial treatment by carefully controlling the temperature range (1120-1220°C) to dissolve COPs and reduce slip lines. This transforms what could be a defect-forming process into a defect-eliminating treatment that strengthens gate dielectric attachment
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively reduces COPs and slip lines, improving switching characteristics and minimizing leakage currents in semiconductor devices, enhancing their performance and reliability.
Implementation Method 1
processing the silicon MCZ semiconductor body by an oxidation process at temperatures exceeding 1120° C. and below 1220° C.
Implementation Method 2
processing the silicon MCZ semiconductor body by an oxidation process at temperatures exceeding 1120° C. and below 1220° C.
Implementation Method 3
introducing platinum into the silicon MCZ semiconductor body
Data Source
AI summary
A method of manufacturing semiconductor devices in a silicon MCZ (magnetic Czochralski) semiconductor body is proposed. The method includes processing the silicon MCZ semiconductor body by an oxidation process at temperatures exceeding 1150° C. and below 1220° C. Thereafter, platinum (Pt) is introduced into the silicon MCZ semiconductor body.