Meander-Shaped Guard Ring Defect Trapping in Semiconductor Storage
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Solution Overview
Problem
Crystal defects generated by the guard ring in semiconductor storage devices can extend to the element formation region, leading to potential device failures due to dislocation and electrical interference.
Innovation Solution
A semiconductor storage device design featuring a guard ring region with a meander-shaped guard ring line and defect trapping layers to intentionally induce crystal defects at stress concentration points, preventing their extension to the element formation region by relaxing distortion and guiding dislocations to trapped regions.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Object-affected harmful factors
If a guard ring is formed around the element formation region, then electrical interference is prevented, but crystal defects and dislocations are generated that can extend to the element formation region
Solution Approach 1:
A meander-shaped guard ring line is introduced as an intermediary structure between the element formation region and the outer guard ring. This meander pattern creates stress concentration points that intentionally generate crystal defects at controlled locations, preventing dislocations from extending to the element formation region while maintaining the electrical isolation function of the guard ring
Solution Approach 2:
The harmful stress and distortion that normally cause unwanted crystal defects are converted into a beneficial mechanism by deliberately designing the meander-shaped guard ring line. The stress concentration points created by the meander pattern intentionally generate crystal defects that act as dislocation sinks, capturing and neutralizing dislocations before they can reach the element formation region
2Device complexity
If a straight guard ring line is used, then the structure is simple, but stress concentration causes unwanted crystal defects
Solution Approach 1:
The guard ring line is transformed from a straight configuration to a meander-shaped configuration with multiple bends and curves. This curvature introduces controlled stress concentration points that deliberately generate crystal defects at specific locations, converting the harmful effect of stress concentration into a beneficial dislocation trapping mechanism
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The design effectively prevents dislocations from reaching the element formation region, enhancing device reliability by relaxing distortion and capturing dislocations before they can cause significant damage.
Implementation Method 1
intentionally induce crystal defects at stress concentration points
Implementation Method 2
relaxing distortion and guiding dislocations to trapped regions
Data Source
AI summary
A semiconductor storage device includes a circuit region formed on a semiconductor substrate, and a guard ring region spaced from one side of the circuit region by a predetermined distance. The guard ring region extends in a first direction, the first direction being a direction in which the one side of the circuit region extends, includes a guard ring line, an element isolation region, a first defect trapping layer, a second defect trapping layer. The first defect trapping layer extends from a boundary location between the circuit region and the element isolation region to a location spaced from a boundary location between the element isolation region and the guard ring line by an offset distance toward the element isolation region in the second direction.