Measurement Wafer UV Radiation and Temperature Monitoring
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Current methods fail to simultaneously monitor UV radiation intensity and temperature effectively under extreme conditions in semiconductor processing environments, such as high temperature and short wavelength, which are crucial for ensuring process uniformity in semiconductor device manufacturing.
Innovation Solution
A measurement wafer apparatus equipped with light sensors and temperature sensors, capable of direct or indirect measurement of UV radiation intensity and temperature, using photoluminescent elements and light guides to enhance sensitivity and accuracy across the wafer surface, with local and central controllers processing data to generate 2D intensity and temperature maps.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If current monitoring methods are used, then device complexity is reduced, but measurement precision of UV radiation and temperature simultaneously deteriorates
Solution Approach 1:
The patent combines multiple sensor types (UV radiation sensors, visible light sensors, and temperature sensors) into a single integrated sensor array on the measurement wafer. This merging allows simultaneous measurement of UV radiation intensity and temperature with high precision, resolving the contradiction by achieving both measurement accuracy and multi-parameter monitoring capability in one unified device.
Solution Approach 2:
The patent introduces photoluminescent elements as intermediaries that convert UV radiation into visible light, which can then be detected by visible light sensors. This intermediary mechanism enables indirect UV radiation measurement with high precision while maintaining device simplicity, as the photoluminescent conversion allows use of well-established visible light detection technology.
2Manufacturing precision
If extreme processing conditions are applied, then manufacturing precision is improved, but reliability of monitoring system deteriorates
Solution Approach 1:
The patent employs photoluminescent elements with specific emission characteristics that allow indirect measurement of UV radiation intensity by detecting visible light emission. This parameter change approach (converting UV to visible wavelength range) enables reliable monitoring under extreme processing conditions, as the photoluminescent conversion process remains stable and predictable even at high temperatures and short wavelengths.
3Measurement precision
If sensor sensitivity is increased, then measurement precision is improved, but device complexity increases
Solution Approach 1:
The patent uses photoluminescent elements that replicate UV radiation information in the visible light spectrum. By creating this optical copy, the system can leverage highly sensitive and well-developed visible light sensor technology to achieve high measurement precision for UV radiation, avoiding the need for complex direct UV detection systems while maintaining high sensitivity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables precise monitoring of UV radiation and temperature exposure on semiconductor wafers, improving process control and uniformity by providing detailed spatial and temporal data, thus addressing the limitations of existing monitoring systems.
Implementation Method 1
using photoluminescent elements and light guides to enhance sensitivity and accuracy
Implementation Method 2
using photoluminescent elements and light guides to enhance sensitivity and accuracy
Implementation Method 3
a thermally conducting contact with a surface that emits electromagnetic radiation in proportion to the temperature of the contact
Data Source
Figure 1A
Figure 1B
Figure 1C
AI summary
A measurement wafer device for measuring radiation intensity and temperature includes a wafer assembly including one or more cavities. The measurement wafer device further includes a detector assembly. The detector assembly is disposed within the one or more cavities of the wafer assembly. The detector assembly includes one or more light sensors. The detector assembly is further configured to perform a direct or indirect measurement of the intensity of ultraviolet light incident on a surface of the wafer assembly. The detector assembly is further configured to determine a temperature of one or more portions of the wafer assembly based on one or more characteristics of the one or more light sensors.