Meissner Effect Transistor Conductivity Control for Terahertz Switching

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Solution Overview

Problem

Current transistors are limited in their ability to efficiently operate at higher frequencies and lower power levels, particularly in the terahertz range, due to heat generation and material limitations.

Innovation Solution

The development of a superconducting Meissner effect transistor (MET) that utilizes a superconducting bridge between current probes, modulated by a magnetic field to break Cooper pairs and control conductivity, allowing for efficient operation at higher frequencies and lower power.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Speed

If traditional silicon transistors operate at higher frequencies to improve performance, then processing speed is improved, but heat generation increases and power consumption increases

Engineering Contradiction:
Improveprocessing speedVSAvoidheat generation
Core Design Contradiction:
SpeedVSTemperature

Solution Approach 1:

The patent changes the fundamental operating parameters by using superconducting materials that operate at cryogenic temperatures, enabling transistor operation at Terahertz frequencies without the heat generation problems of silicon transistors. The superconducting state allows for extremely low resistance and minimal power dissipation.

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The patent utilizes the phase transition of materials into the superconducting state below their critical temperature to achieve zero electrical resistance. This phase transition enables the transistor to operate with minimal energy loss and no heat generation from resistive heating.

Inventive Principle:
Principle #36Phase transitions

2Speed

If traditional silicon transistors operate at higher frequencies to improve performance, then processing speed is improved, but power consumption increases

Engineering Contradiction:
Improveprocessing speedVSAvoidpower consumption
Core Design Contradiction:
SpeedVSUse of energy by moving object

Solution Approach 1:

The patent changes the fundamental operating parameters by using superconducting materials that operate at cryogenic temperatures, enabling transistor operation at Terahertz frequencies without the power consumption problems of silicon transistors. The superconducting state allows for extremely low resistance and minimal power dissipation.

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The patent utilizes the phase transition of materials into the superconducting state below their critical temperature to achieve zero electrical resistance. This phase transition enables the transistor to operate with minimal energy loss and no heat generation from resistive heating.

Inventive Principle:
Principle #36Phase transitions

3Ease of operation

If a magnetic field is applied to break Cooper pairs in a superconducting bridge, then conductivity is modulated for transistor operation, but the magnetic field strength must be precisely controlled below critical field value

Engineering Contradiction:
Improveconductivity modulationVSAvoidmagnetic field control
Core Design Contradiction:
Ease of operationVSDevice complexity

Solution Approach 1:

The patent employs feedback control mechanisms to monitor and adjust the magnetic field strength applied to the superconducting bridge, ensuring it remains below the critical field value while achieving the desired conductivity modulation. This feedback system maintains stable operation without exceeding the superconducting material's critical parameters.

Inventive Principle:
Principle #23Feedback

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The MET achieves improved frequency response and power efficiency by modulating the conductivity of the superconducting bridge with a magnetic field, enabling operation up to 1.25 THz and potentially addressing the limitations of traditional silicon computer chips.

Implementation Method 1

a control line is configured to emit a magnetic field signal having signal strength Hsig at a superconducting bridge, wherein the emitted magnetic field is configured to break Cooper pairs in a superconducting bridge

Methodology Applied
Scientific EffectCooper pair breaking: Superconductivity

Implementation Method 2

superconducting Meissner effect transistor (MET)

Methodology Applied
Scientific EffectMeissner effect: Meissner Effect

Data Source

PatentUS12290009B2Terahertz transistor
Publication Date: 2025.04.29 THE ARIZONA BOARD OF REGENTS ON BEHALF OF THE UNIV OF ARIZONA
  • US12290009B2 patent drawing
  • US12290009B2 patent drawing
  • US12290009B2 patent drawing

AI summary

Superconducting Meissner effect transistors, methods of modulating, and systems are disclosed. In one aspect a disclosed transistor includes a superconducting bridge between a first and a second current probe, the first and second current probe being electrically connected to a source and a drain electrical connection, respectively and a control line configured to emit a magnetic field signal having signal strength Hsig at the superconducting bridge. In one aspect the emitted magnetic field is configured to break Cooper pairs in the superconducting bridge.