Nonvolatile Memory Electrode Side-Surface Contact Adhesion
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Solution Overview
Problem
In ReRAMs, insufficient adhesion between the resistance change layer and the electrode containing a metal element can lead to electrical disconnection, reducing the yield of memory devices.
Innovation Solution
A nonvolatile memory design with an electrode layer containing a metal element in contact with the side surface of the resistance change layer, supported by wiring lines to ensure adhesion and prevent disconnection, along with structural modifications such as projection portions and insulating layers to enhance electric field intensity and write speed.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the electrode layer is positioned on the side surface of the resistance change layer, then adhesion is improved and disconnection is prevented, but the device structure becomes more complex
Solution Approach 1:
The electrode layer is repositioned from a conventional planar configuration to a side-surface position relative to the resistance change layer. This dimensional change in electrode placement allows the electrode to contact the resistance change layer at its side surface, improving adhesion and preventing disconnection while integrating smoothly into the existing memory device architecture.
Data Source
AI summary
A nonvolatile memory according to an embodiment includes a first wiring line; a second wiring line arranged above the first wiring line and extending in a direction crossing the first wiring line; and a resistance change layer arranged in an intersection region of the first wiring line the second wiring line, the second wiring line including a first member extending in the direction in which the second wiring line extends, and an electrode layer containing a metal element arranged on a side surface of the first member along the direction in which the second wiring line extends, a lower surface of the electrode layer being in contact with an upper surface of the resistance change layer.