Membrane Semiconductor Structure for Dicing-Free Singulation
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Solution Overview
Problem
The high cost and inefficiency of singulating membrane semiconductor components using traditional dicing methods, which result in significant wafer area loss and increased costs, especially for larger wafer diameters, and the issue of backside chipping during the dicing process.
Innovation Solution
The introduction of a second backside cavity in the outer region of the membrane semiconductor component, allowing for dicing-free singulation processes through lateral expansion or pressurization, reducing the thickness to be cut and enabling narrower dicing lines, thus minimizing wafer area loss and avoiding backside chipping.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If traditional dicing methods are used for singulating membrane semiconductor components, then the components can be separated into individual chips, but significant wafer area is lost and costs increase
Solution Approach 1:
The patent introduces a second backside cavity in the outer region of the membrane semiconductor component, dividing the substrate structure into distinct functional regions. This segmentation allows for optimized dicing line placement that minimizes wafer area loss during singulation while maintaining component integrity.
Solution Approach 2:
The patent utilizes the vertical dimension by creating backside cavities at different locations (first backside cavity under the active region, second backside cavity in the outer region). This three-dimensional structural approach enables more efficient singulation paths that reduce lateral wafer area loss compared to traditional planar dicing methods.
2Productivity
If traditional dicing methods are used, then singulation can be performed, but the process time increases and costs increase for larger wafer diameters
Solution Approach 1:
The patent prepares the substrate structure in advance by forming backside cavities in specific regions before the singulation process. This preliminary structural preparation enables faster and more efficient dicing operations, reducing the actual singulation time required for large diameter wafers.
Solution Approach 2:
The patent applies different structural characteristics to different regions of the substrate - the first backside cavity under the active region provides mechanical support and defines the cutting path, while the second backside cavity in the outer region optimizes the dicing line geometry. This localized structural optimization reduces overall process time.
3Productivity
If traditional dicing methods are used, then chips can be separated, but backside chipping occurs during the dicing process
Solution Approach 1:
The patent positions the first backside cavity under the active region to provide structural cushioning and support during the dicing process. This pre-positioned structural feature prevents backside chipping by distributing mechanical stresses away from the fragile active region during chip separation.
Solution Approach 2:
The backside cavities act as intermediary structural features that mediate between the dicing blade and the active region. The first backside cavity serves as a stress distribution zone that protects the active region from chipping, while the second backside cavity in the outer region provides additional structural guidance for clean separation.
Data Source
AI summary
A membrane semiconductor component which has an outer region and a membrane region. At least part of a substrate is disposed in the outer region. The substrate is structured such that a backside cavity is configured in the membrane region. The backside cavity is free of substrate. At least one active region is disposed in the membrane region, and the active region comprises at least one pn transition. At least one target contact point for membrane semiconductor component-external contacting is disposed on or above the substrate in the outer region. The target contact point has an electrically conductive structure, which is coupled to the active region.