Memory Access Line Hold for Consecutive Read Latency

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Solution Overview

Problem

Consecutive read operations in memory systems are hindered by latency due to the recovery phase required after each read operation, which involves discharging and re-activating access lines, leading to increased processing time and inefficiency.

Innovation Solution

The memory system skips the recovery phase between sequential read operations by keeping access lines activated, allowing subsequent read operations to be performed without re-activation, thereby reducing latency.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If the recovery phase is performed between read operations to discharge and re-activate access lines, then the memory system maintains proper electrical state and reliability, but the processing time increases and efficiency decreases

Engineering Contradiction:
Improvememory operation reliabilityVSAvoidread operation latency
Core Design Contradiction:
ReliabilityVSLoss of time

Solution Approach 1:

The patent extracts the recovery phase operation from the standard read operation sequence. By identifying that the recovery phase (discharging access lines) is only necessary after certain types of operations, the patent removes this step from consecutive read operations where it is not needed, thereby reducing latency while maintaining reliability when actually required

Inventive Principle:
Principle #2Taking out (Extraction)

Solution Approach 2:

The patent dynamically adjusts the memory operation sequence based on the type of operation being performed. The system determines whether to include the recovery phase based on the specific read operation context, making the operation sequence flexible rather than fixed, which optimizes performance for consecutive reads while maintaining reliability for operations that require it

Inventive Principle:
Principle #15Dynamics

2Reliability

If the access lines are discharged and re-activated between read operations, then the memory system ensures proper electrical recovery, but the processing speed decreases

Engineering Contradiction:
Improveelectrical state stabilityVSAvoidread operation speed
Core Design Contradiction:
ReliabilityVSSpeed

Solution Approach 1:

The patent removes the discharge and re-activation steps from the read operation sequence when performing consecutive reads on the same block. By extracting these unnecessary electrical recovery steps, the system achieves faster read speeds while maintaining electrical stability through selective application of recovery only when needed

Inventive Principle:
Principle #2Taking out (Extraction)

Solution Approach 2:

The patent enables continuous read operations by keeping access lines activated throughout the sequence. By eliminating the discharge and re-activation cycles between consecutive reads, the system maintains continuous useful action (data retrieval) without interruption, thereby increasing read speed while ensuring electrical stability through controlled recovery phases

Inventive Principle:
Principle #20Continuity of useful action

Data Source

PatentUS12468447B2Efficiency for consecutive read operations
Publication Date: 2025.11.11 MICRON TECHNOLOGY INC
  • US12468447B2 patent drawing
  • US12468447B2 patent drawing
  • US12468447B2 patent drawing

AI summary

Methods, systems, and devices for improved efficiency for consecutive read operations are described. For example, a memory system may receive a first command indicating a first read operation in a block of memory cells that are each configured to store more than one bit. In response to receiving the first command, the memory system may initiate the performance of the first read operation by applying a voltage to a set of access lines associated with the block of memory cells. The memory system may additionally receive a second read command indicating a second, consecutive read operation in the block of memory cells, where the second command includes an indication to refrain from discharging the set of access lines. Here, the memory system may initiate the performance of the second read operation without first discharging the set of access lines after the performance of the first read operation.