Memory Device Adaptive Programming Erase Suspend Count
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Solution Overview
Problem
Memory devices face challenges in efficiently performing program operations due to variations in erase depth, leading to over-erased memory cells that delay operations and deteriorate retention performance.
Innovation Solution
A memory device with an erase operation controller, erase suspend count manager, and program parameter value determiner that adjusts parameter values for program operations based on the number of erase operation suspensions, allowing for adaptive programming to optimize erase depth and improve retention.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If the erase operation is performed multiple times or suspended and restarted, then the erase depth increases, but the program operation time increases and retention performance deteriorates
Solution Approach 1:
The patent applies preliminary action by performing a read operation before the program operation to detect over-erased memory cells. This allows the system to identify cells that require additional erase cycles or have abnormal threshold voltages, enabling proactive adjustment of program parameters rather than reacting after the problem occurs. The read operation提前 detects issues with erase depth, allowing the program operation to be optimized based on this information.
Solution Approach 2:
The patent changes program parameters dynamically based on the erase suspend count and read operation results. When over-erased cells are detected or when the erase suspend count indicates deep erasure, the system adjusts program parameters such as program voltage, program loops, or verify thresholds. This parameter adaptation allows the system to handle varying erase depths efficiently, preventing program operation delays while maintaining data integrity.
2Manufacturing precision
If the erase operation is suspended and restarted multiple times, then the erase depth increases, but the retention performance deteriorates
Solution Approach 1:
The patent implements feedback by using the read operation results and erase suspend count as feedback signals to adjust subsequent program operations. The system reads the memory block after erase, analyzes the threshold voltage distribution, and uses this information to modify program parameters for the next operation. This closed-loop feedback mechanism ensures that over-erased cells are identified and handled appropriately, preventing retention performance deterioration while achieving the required erase depth.
Solution Approach 2:
The patent changes program parameters based on the feedback from read operations and erase suspend counts. When deep erasure is detected (indicated by high erase suspend count or abnormal read results), the system adjusts program parameters such as increasing program voltage, adding program loops, or modifying verify thresholds. These dynamic parameter changes ensure that the program operation compensates for over-erasure effects, maintaining reliable data retention while achieving complete erasure.
3Device complexity
If the program operation uses fixed parameter values, then the device complexity is low, but the efficiency of program operations decreases due to over-erased cells
Solution Approach 1:
The patent applies dynamics by making program parameters dynamic rather than fixed. The system determines program parameters based on the erase suspend count and read operation results, allowing parameters to adapt to the actual state of the memory block. This dynamic approach enables the system to handle over-erased cells efficiently by adjusting parameters in real-time, significantly improving program operation efficiency without requiring complex additional hardware.
Solution Approach 2:
The patent changes program parameters dynamically based on operational conditions. Instead of using fixed parameter values, the system selects different program voltages, program loop counts, and verify thresholds based on the erase suspend count and read results. This parameter adaptation allows the system to optimize program operation efficiency for each specific case, whether the memory block requires standard or enhanced programming due to over-erasure, thereby improving overall productivity.
Data Source
AI summary
A memory device includes an erase operation controller for performing an erase operation on a memory block; an erase suspend count manager for managing an erase suspend count representing a number of times the erase operation is suspended until the erase operation on the memory block is completed; and a program parameter value determiner for determining a parameter value to be used for a program operation on the memory block, based on the erase suspend count.