Memory System Using Address Conversion for Nonvolatile Storage
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Solution Overview
Problem
Conventional DRAM requires periodic refreshing, leading to high power consumption, while non-volatile memory alternatives have lower write speed and rewrite durability issues.
Innovation Solution
A memory system configuration using a first non-volatile memory for large-capacity storage, a second volatile memory for high-speed access, and a third non-volatile memory for address conversion, allowing efficient access and data retention across power cycles.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Use of energy by stationary object
If non-volatile memory is used as main memory to replace DRAM, then power consumption is reduced, but access speed deteriorates
Solution Approach 1:
The memory system is segmented into multiple non-volatile memory devices with different access characteristics (first memory device with larger access size, second memory device with smaller access size). This segmentation allows the system to optimize between power consumption and access speed by selecting appropriate memory devices based on access patterns.
Solution Approach 2:
The patent introduces address conversion information stored in a third non-volatile memory device as an additional dimension to manage access to multiple memory devices. This address conversion mechanism enables efficient mapping between different memory devices without requiring high-speed volatile memory, thus maintaining power efficiency while improving access speed.
2Duration of action of stationary object
If non-volatile memory is used as main memory, then data retention is improved, but write speed deteriorates
Solution Approach 1:
The system segments write operations across different non-volatile memory devices based on access size requirements. The first memory device handles larger data sizes while the second handles smaller data sizes, optimizing overall write performance while maintaining data retention characteristics of non-volatile memory.
Solution Approach 2:
The address conversion information stored in the third non-volatile memory device acts as an intermediary that enables efficient write operations to the first and second memory devices. This intermediary structure allows the system to manage write operations more effectively without sacrificing data retention.
3Quantity of substance
If non-volatile memory with larger access size is used, then storage capacity is improved, but access flexibility deteriorates
Solution Approach 1:
The system divides storage into multiple non-volatile memory devices with different access size characteristics. The first memory device provides large storage capacity with larger access size, while the second memory device provides access flexibility with smaller access size. This segmentation allows the system to simultaneously achieve both large storage capacity and flexible access patterns.
Solution Approach 2:
The address conversion information in the third non-volatile memory device adds a dimensional layer that enables flexible access to both memory devices. This conversion mechanism translates between different address spaces, allowing the system to access either memory device appropriately based on the required access size, thus maintaining access flexibility despite using large-capacity memory devices.
Data Source
AI summary
A memory system has a first memory to be accessed per first data size, a second memory to be accessed per second data size smaller than the first data size, the second memory being accessible at a higher speed than the first memory; and a third memory to store address conversion information that converts an address for accessing the second memory into an address for accessing the first memory. The first and third memories are non-volatile memories.