Semiconductor Memory Address Input Path Selection Circuit

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Solution Overview

Problem

Conventional semiconductor memory devices require a large circuit area due to numerous delay elements in address input path selection circuits, which can lead to malfunctions as Y-address input enable signals are activated regardless of the bank state, causing operational issues during read/write operations.

Innovation Solution

The semiconductor memory device incorporates address input path selection circuits with a signal input unit that activates Y-address input enable signals based on bank-specific read/write signals and a latch unit that operates only when a bank is active, eliminating the need for internal read and write signals and reducing the requirement for delay elements.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If conventional address input path selection circuits are used with numerous delay elements, then the circuit can generate Y-address input enable signals, but the circuit area becomes large and malfunctions occur when signals are activated regardless of bank state

Engineering Contradiction:
Improveoperational reliabilityVSAvoidcircuit area
Core Design Contradiction:
ReliabilityVSArea of stationary object

Solution Approach 1:

The patent extracts and eliminates the unnecessary internal read and write signals from the address input path selection circuit. By removing these redundant signals and the associated delay elements, the circuit area is reduced while maintaining reliable operation through the simplified signal path that only uses bank-specific read/write signals.

Inventive Principle:
Principle #2Taking out (Extraction)

Solution Approach 2:

Instead of using internal read and write signals to control the address input path selection, the patent inverts the approach by using bank-specific read/write signals directly. This inversion eliminates the need for delay elements and prevents malfunctions by ensuring signals are only activated when the corresponding bank is actually active.

Inventive Principle:
Principle #13The other way round (Inversion)

2Device complexity

If address input path selection circuits operate without bank state checking, then the circuit structure is simpler, but malfunctions occur when Y-address input enable signals are activated regardless of bank state

Engineering Contradiction:
Improvecircuit structure complexityVSAvoidoperational reliability
Core Design Contradiction:
Device complexityVSReliability

Solution Approach 1:

The patent implements feedback by using the bank active signal to control the enablement of the address input path selection circuit. The bank-specific read/write signals are only processed when the corresponding bank is active, creating a feedback mechanism that prevents malfunctions while maintaining relatively simple circuit structure through the use of standard logic gates.

Inventive Principle:
Principle #23Feedback

Data Source

PatentUS7843757B2Semiconductor memory device including address input path selection circuit
Publication Date: 2010.11.30 SK HYNIX INC
  • US7843757B2 patent drawing
  • US7843757B2 patent drawing
  • US7843757B2 patent drawing

AI summary

A semiconductor memory device having banks includes an address input path selection circuit in each of the banks, the address input path selection circuit including a signal input unit configured to selectively activate a Y-address input enable signal in response to a bank-specific read/write signal, and a latch unit configured to latch the Y-address input enable signal. The address input path selection circuit reduces circuit area by reducing delay elements and prevents malfunction by operating only in a bank active state.