Semiconductor Memory Device Air Gap Integration Density
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Solution Overview
Problem
In stacked semiconductor memory devices, the integration of memory cells is limited by the spacing between electrode films, which hinders further miniaturization and increases parasitic capacitance, affecting signal delay and data retention.
Innovation Solution
The semiconductor memory device incorporates air gaps between electrode films, a high dielectric constant film along the outer surface of these gaps, and a charge storage film to reduce parasitic capacitance, enhance data retention, and increase integration density by allowing shorter electrode film spacing.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If the spacing between electrode films is reduced to increase integration density, then integration density improves, but parasitic capacitance increases
Solution Approach 1:
The patent introduces air gaps (porous structures) between adjacent electrode films to reduce parasitic capacitance. The air gaps create physical separation that lowers the capacitive coupling between electrodes, enabling shorter spacing without proportionally increasing parasitic capacitance, thus improving integration density while controlling harmful electrical effects.
Solution Approach 2:
The patent introduces an intermediary substance (air or dielectric material) filling the gaps between electrode films. This intermediary layer acts as a mediator that reduces direct electrical interaction between adjacent electrodes, thereby reducing parasitic capacitance while allowing the electrode films to be placed closer together for higher integration density.
2Quantity of substance
If the spacing between electrode films is reduced to increase integration density, then integration density improves, but signal delay increases
Solution Approach 1:
The air gaps introduced as porous structures serve to reduce parasitic capacitance between electrode films. By lowering the capacitive coupling, the RC time constant is reduced, which decreases signal delay. This allows the electrode spacing to be reduced for higher integration density without proportionally increasing signal delay.
3Quantity of substance
If the spacing between electrode films is reduced to increase integration density, then integration density improves, but data retention deteriorates
Solution Approach 1:
The air gaps between electrode films reduce parasitic capacitance and electrical interference, which helps maintain stable electrical characteristics over time. This stability is crucial for data retention in memory devices, allowing shorter electrode spacing without compromising the reliability of stored data.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution reduces parasitic capacitance, suppresses electron diffusion between memory cells, and increases integration density by enabling shorter electrode film spacing, improving signal delay and data retention.
Implementation Method 1
incorporates air gaps between electrode films, a high dielectric constant film along the outer surface of these gaps
Implementation Method 2
a high dielectric constant film provided along an outer surface of the air gap
Data Source
AI summary
According to one embodiment, a semiconductor memory device includes a substrate, a plurality of electrode films arranged along a first direction with an air gap interposed, the first direction crossing a surface of the substrate, a semiconductor member extending in the first direction, a charge storage member provided between the semiconductor member and each of the electrode films, and a high dielectric constant film provided along an outer surface of the air gap, a relative dielectric constant of the high dielectric constant film being higher than a relative dielectric constant of silicon oxide.