Memory Array Conductive Tiers Segmentation Oxidation

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Solution Overview

Problem

Current methods for forming memory arrays face challenges in efficiently forming strings of memory cells with direct electrical coupling and separation of conductive tiers, leading to suboptimal performance and reliability.

Innovation Solution

The method involves forming a vertical stack of alternating insulative and conductive tiers with channel-material strings extending through them, and using conductor material to electrically couple and separate the conductive tiers by forming an insulative oxide, which is then removed to allow for the formation of memory blocks with improved electrical access and structure.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If conductor material is used to electrically couple conductive tiers, then electrical connectivity is improved, but direct electrical access to memory cells is compromised

Engineering Contradiction:
Improveelectrical couplingVSAvoidelectrical access
Core Design Contradiction:
ReliabilityVSEase of operation

Solution Approach 1:

The conductor material is segmented into discrete portions, with gaps between them. These gaps allow channel-material strings to pass through, enabling direct electrical access to memory cells while the conductor portions provide electrical coupling between conductive tiers. This segmentation resolves the contradiction by allowing both functions to coexist in different spatial locations within the same structure.

Inventive Principle:
Principle #1Segmentation

2Reliability

If conductor material extends along trench sidewalls, then electrical coupling between tiers is enhanced, but separation of individual memory blocks is reduced

Engineering Contradiction:
Improveelectrical couplingVSAvoidblock separation
Core Design Contradiction:
ReliabilityVSManufacturing precision

Solution Approach 1:

The conductor material exhibits different properties at different locations: along the trench sidewalls, it provides continuous electrical coupling between tiers, while in the trench floor region, gaps are introduced to allow block separation. This local differentiation of conductor material properties resolves the contradiction by optimizing electrical coupling where needed while maintaining block separation where required.

Inventive Principle:
Principle #3Local quality

3Manufacturing precision

If insulative oxide is formed through conductor material, then separation of conductive tiers is achieved, but electrical coupling is reduced

Engineering Contradiction:
Improvetier separationVSAvoidelectrical coupling
Core Design Contradiction:
Manufacturing precisionVSReliability

Solution Approach 1:

The insulative oxide is formed only in specific regions (trench floor) rather than continuously through the entire conductor material. This selective formation creates localized separation zones that enable block differentiation while preserving electrical coupling in the sidewall regions. The segmentation of the insulative oxide formation resolves the contradiction by providing separation only where needed.

Inventive Principle:
Principle #1Segmentation

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach enhances the electrical coupling and separation of conductive tiers, leading to improved performance and reliability of memory arrays by ensuring direct and efficient electrical access to memory cells, thereby improving data storage and retrieval capabilities.

Implementation Method 1

The conductor material is exposed to oxidizing conditions to form an insulative oxide laterally-through the conductor material

Methodology Applied
Scientific EffectOxidation: Oxidation

Data Source

PatentUS11895834B2Methods used in forming a memory array comprising strings of memory cells
Publication Date: 2024.02.06 MICRON TECHNOLOGY INC
  • US11895834B2 patent drawing
  • US11895834B2 patent drawing
  • US11895834B2 patent drawing

AI summary

A method used in forming a memory array comprising strings of memory cells comprises forming memory blocks individually comprising a vertical stack comprising alternating insulative tiers and conductive tiers. Channel-material strings extend through the insulative tiers and the conductive tiers. Horizontally-elongated trenches are between immediately-laterally-adjacent of the memory blocks. Conductor material is in and extends elevationally along sidewalls of the trenches laterally-over the conductive tiers and the insulative tiers and directly electrically couples together conducting material of individual of the conductive tiers. The conductor material is exposed to oxidizing conditions to form an insulative oxide laterally-through the conductor material laterally-over individual of the insulative tiers to separate the conducting material of the individual conductive tiers from being directly electrically coupled together by the conductor material. Additional embodiments are disclosed.