Non-Volatile Memory Array for Analog Synapse Weight Computing

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Solution Overview

Problem

Existing artificial neural networks face challenges in achieving high computational parallelism and energy efficiency due to the lack of adequate hardware technology, particularly in implementing synapses with CMOS circuits, which are bulky and inefficient compared to biological networks.

Innovation Solution

Utilizing non-volatile memory arrays as synapses in neural networks, allowing for individual programming, erasing, and reading of memory cells without disturbing others, and enabling continuous analog programming for precise tuning of synapse weights.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Power

If CMOS analog circuits are used to implement synapses in neural networks, then the neural network can perform computation, but the circuit area becomes bulky and energy efficiency deteriorates

Engineering Contradiction:
Improveenergy efficiencyVSAvoidcircuit area
Core Design Contradiction:
PowerVSArea of moving object

Solution Approach 1:

The patent merges the functions of synaptic weight storage and computation into a single non-volatile memory cell. The memory cell simultaneously stores weight values and performs analog multiplication with input signals during read operations, eliminating the need for separate CMOS analog computation circuits. This integration dramatically reduces circuit area while maintaining energy efficiency, as non-volatile memory cells require minimal power for read operations compared to active CMOS circuits.

Inventive Principle:
Principle #5Merging (Combining)

2Productivity

If digital supercomputers or GPU clusters are used to achieve high computational parallelism, then connectivity between neurons can be increased, but cost and energy consumption increase significantly

Engineering Contradiction:
Improvecomputational parallelismVSAvoidenergy consumption
Core Design Contradiction:
ProductivityVSUse of energy by stationary object

Solution Approach 1:

The patent replaces digital mechanical/computational systems (CMOS logic circuits performing sequential multiplication and addition) with an analog physical system based on Ohm's law. Current flowing through memory cells representing synaptic weights naturally performs parallel multiplication with input voltages, and currents summing at node lines automatically perform addition. This physical analog computation achieves high computational parallelism with minimal energy consumption, as it leverages fundamental electrical properties rather than requiring complex digital processing.

Inventive Principle:
Principle #28Mechanics substitution (Replace mechanical system)

3Ease of operation

If non-volatile memory arrays are used as synapses, then individual programming and reading of memory cells is enabled, but the complexity of controlling and managing the array increases

Engineering Contradiction:
Improveindividual cell programmingVSAvoidarray control complexity
Core Design Contradiction:
Ease of operationVSDevice complexity

Solution Approach 1:

The patent segments the control of the memory array into independent word lines and bit lines, allowing individual memory cells to be accessed by activating specific row and column selections. This segmentation enables precise individual programming and reading of synapse weights without disturbing other cells in the array. The segmented address decoding structure simplifies control logic compared to fully interconnected approaches, as each cell can be independently addressed through the intersection of selected word and bit lines.

Inventive Principle:
Principle #1Segmentation

Data Source

PatentUS12566569B2Array of non-volatile memory cells to store data in analog form and digital form
Publication Date: 2026.03.03 SILICON STORAGE TECHNOLOGY INC
  • US12566569B2 patent drawing
  • US12566569B2 patent drawing
  • US12566569B2 patent drawing

AI summary

Numerous embodiments of an array of non-volatile memory cells are disclosed herein. In one example, a system comprises an array of non-volatile memory cells arranged into rows and columns; wherein in a first mode, the array stores digital data; and wherein in a second mode, the array stores analog data.