Integrated Memory Assembly With Protective Rings for Conductive Posts
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing methods for forming integrated memory devices, particularly NAND memory, face challenges in protecting lower regions of conductive posts during etching processes, which can lead to structural integrity issues and inefficiencies.
Innovation Solution
The use of protective material in the form of annular rings, comprising laminates, is applied to laterally surround lower regions of conductive posts during etching, providing protection and enhancing the structural integrity of the integrated assembly.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional etching processes are used without protective material, then the etching process can proceed without additional steps, but the lower regions of conductive posts are damaged and structural integrity is compromised
Solution Approach 1:
Protective material is applied to the lower regions of conductive posts before the etching process begins. This preliminary protective action prevents damage to the conductive posts during subsequent etching operations, ensuring structural integrity without requiring complex process modifications
Solution Approach 2:
A protective material layer is introduced as an intermediary between the etching chemistry and the conductive posts. This intermediary layer selectively protects the lower regions of conductive posts from etching damage while allowing the etching process to proceed on other structures
2Reliability
If protective material is applied to conductive posts, then structural integrity is improved, but additional fabrication steps and time are required
Solution Approach 1:
The protective material is applied in advance during the fabrication sequence, allowing the etching process to proceed without interruption. This preliminary protection ensures reliable conductive post structures while integrating smoothly into the overall fabrication timeline
Solution Approach 2:
The protective material serves as a temporary, disposable layer that is applied specifically for protection during etching and is subsequently removed. This short-living protective element provides necessary reliability without requiring permanent structural modifications or extended process times
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively safeguards the conductive posts during etching, improving the structural integrity and efficiency of the integrated memory device fabrication process.
Implementation Method 1
protective material in the form of annular rings, comprising laminates, is applied to laterally surround lower regions of conductive posts during etching, providing protection and enhancing the structural integrity
Data Source
AI summary
Some embodiments include an integrated assembly having a memory region and another region adjacent the memory region. Channel-material-pillars are arranged within the memory region, and conductive posts are arranged within said other region. A source structure is coupled to lower regions of the channel-material-pillars. A panel extends across the memory region and said other region, and separates a first memory-block-region from a second memory-block-region. Doped-semiconductor-material is directly adjacent to the panel within the memory region and the other region. Rings laterally surround lower regions of the conductive posts. The rings are between the conductive posts and the doped-semiconductor-material. The rings include laminates of two or more materials, with at least one of said two or more materials being insulative. Some embodiments include methods for forming integrated assemblies.


