Memory Bad Block Allowance Modeling for Target QoS

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Solution Overview

Problem

Current methods for determining grown bad block allowance in memory devices during characterization are not aligned with performance metrics and degradation relationships, leading to inaccurate and inefficient settings that negatively impact Quality of Service (QoS).

Innovation Solution

A characterization process is implemented during a pre-runtime stage to establish grown bad block allowance based on relationships between parameters impacted by degradation over the lifecycle of the memory device, including throughput metrics and write amplification, to align with performance requirements.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Measurement precision

If grown bad block allowance is determined using current methods during characterization, then the setting process is simple, but the alignment with performance metrics and degradation relationships is poor, leading to inaccurate QoS settings

Engineering Contradiction:
Improveaccuracy of grown bad block allowance settingVSAvoidcomplexity of characterization process
Core Design Contradiction:
Measurement precisionVSDevice complexity

Solution Approach 1:

The patent applies preliminary action by determining the grown bad block allowance during the pre-runtime characterization stage rather than during runtime. The system performs degradation modeling and relationship analysis between parameters (such as program/erase cycle counts, throughput metrics, and write amplification) before the memory device is deployed, allowing accurate QoS settings to be established in advance based on predicted degradation patterns

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The patent applies parameter changes by dynamically adjusting the grown bad block allowance based on determined relationships between multiple parameters including program/erase cycle counts, throughput metrics, and write amplification factors. The system modifies the allowance value according to the specific degradation characteristics and performance requirements of each memory device, rather than using fixed or simplified settings

Inventive Principle:
Principle #35Parameter changes

2Productivity

If grown bad block allowance is set without considering degradation relationships, then the characterization process is fast, but the Quality of Service (QoS) performance deteriorates

Engineering Contradiction:
Improveefficiency of characterization processVSAvoidQuality of Service (QoS)
Core Design Contradiction:
ProductivityVSReliability

Solution Approach 1:

The system performs degradation modeling and relationship determination during the pre-runtime characterization stage, establishing accurate grown bad block allowance settings before the memory device begins runtime operations. This preliminary analysis of degradation patterns ensures that QoS requirements are met throughout the device lifecycle without requiring slow runtime adjustments

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The patent applies feedback by using determined relationships between parameters (program/erase cycles, throughput, write amplification) to continuously refine and adjust the grown bad block allowance. The system incorporates feedback from degradation modeling to optimize the allowance setting, ensuring that QoS performance is maintained while preserving characterization efficiency

Inventive Principle:
Principle #23Feedback

Data Source

PatentUS20260037136A1Determining grown bad block allowance associated with a memory device
Publication Date: 2026.02.05 MICRON TECHNOLOGY INC
  • US20260037136A1 patent drawing
  • US20260037136A1 patent drawing
  • US20260037136A1 patent drawing

AI summary

A processing device determines, during a pre-runtime stage associated with a memory device, a first relationship comprising a first modeling of a first parameter of the memory device and a second parameter of the memory device. During the pre-runtime stage, a grown bad block allowance is determined based on the first relationship associated with the memory device. The grown bad blocks allowance is stored in a storage location associated with the memory device, where the memory device uses the grown bad blocks allowance during runtime.