Nonvolatile Memory Block Bipolar Phenomenon Prevention
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Solution Overview
Problem
Nonvolatile data storage devices face issues with bipolar phenomena between pass transistors, which can affect data reliability and storage efficiency.
Innovation Solution
Applying a bipolar prohibition voltage to program-inhibited memory blocks connected to pass transistors, preventing the formation of bipolar junctions and improving data reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of operation
If pass transistors are enabled to select memory blocks, then memory block selection capability is improved, but bipolar phenomenon occurs between adjacent pass transistors causing data reliability degradation
Solution Approach 1:
The patent applies a bipolar prohibition voltage to the program-inhibited memory block before and during the programming operation to prevent the bipolar phenomenon from occurring. This preliminary counter-action blocks the harmful current path that would form through the enabled pass transistor of the program-inhibited block, thereby preventing data reliability degradation while maintaining the block selection capability.
Solution Approach 2:
The bipolar prohibition voltage acts as an intermediary control mechanism between the enabled pass transistors. By introducing this intermediate voltage level, the patent prevents direct harmful interaction (bipolar phenomenon) between adjacent enabled pass transistors while allowing them to remain in the enabled state for proper memory block selection.
2Productivity
If program voltage is applied to selected word line, then programming operation is achieved, but bipolar phenomenon forms between enabled pass transistors of adjacent memory blocks
Solution Approach 1:
Before applying the program voltage to the selected word line, the bipolar prohibition voltage is already applied to the program-inhibited memory block. This preliminary anti-action prevents the formation of bipolar phenomenon even when the program voltage is subsequently applied, allowing efficient programming operations without generating harmful bipolar effects.
Solution Approach 2:
The patent converts the potential harmful bipolar phenomenon into a controlled condition by using the bipolar prohibition voltage. The enabled pass transistor in the program-inhibited block, which would normally create a harmful current path, is instead controlled to maintain a safe voltage level, transforming a potential hazard into a controlled state that allows efficient programming.
3Device complexity
If multiple memory blocks share a block word line, then device integration is improved, but difficulty in independently controlling program and program-inhibited blocks increases
Solution Approach 1:
The patent applies different voltage conditions to different regions (memory blocks) that share the same block word line. By applying the bipolar prohibition voltage specifically to the program-inhibited block while allowing normal voltage conditions in the program block, the system achieves local differentiation that enables independent control despite shared infrastructure, maintaining high device integration.
Solution Approach 2:
The patent changes the voltage parameter of the block word line or associated control lines to achieve independent control. By dynamically adjusting voltage levels (applying bipolar prohibition voltage to specific blocks), the system can independently control program and program-inhibited operations in memory blocks that share the same block word line, maintaining ease of operation despite high integration.
Data Source
AI summary
Provided are methods of programming a nonvolatile data storage device including memory blocks sharing a block word line. The methods may include selecting the memory blocks, and the selected memory blocks may include a first memory block that is to be programmed and a second memory block that is to be program-inhibited. The methods may also include applying a program voltage to a selected word line of the first memory block. The methods may further include applying a bipolar prohibition voltage to word lines of the second memory block.