Semiconductor Memory Bit Line-Kick Line Capacitive Coupling
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Solution Overview
Problem
Current semiconductor memory devices face challenges in achieving high-speed operations due to variations in bit line charging and discharging times across different regions of the memory cell array, leading to inefficiencies in read operations.
Innovation Solution
The semiconductor memory device incorporates a bit line-kick line configuration where the bit line-kick line faces the upper surface of the bit line in regions far from the sense amplifier, allowing for capacitive coupling to accelerate charging and discharging, thereby enabling faster read operations by optimizing the voltage supply to the bit line-kick line and bit lines.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If conventional bit line configuration is used, then device structure is simple, but read operation speed is limited due to variations in charging and discharging times across different regions
Solution Approach 1:
The bit line configuration is segmented into multiple regions along the first direction, with different wiring arrangements in different regions. Specifically, in regions far from the sense amplifier, the bit line-kick line faces the upper surface of the bit line, while in regions close to the sense amplifier, the configuration transitions to allow direct connection. This segmentation allows optimization of charging/discharging characteristics in different regions without requiring complete redesign of the entire structure.
Solution Approach 2:
The bit line-kick line serves as an intermediary element that provides capacitive coupling to the bit line in regions far from the sense amplifier. This intermediary structure accelerates the charging and discharging of bit lines in those regions by providing an additional coupling path, thereby reducing the speed variations that would otherwise occur across different regions of the memory cell array.
2Loss of time
If bit line-kick line configuration is added, then charging and discharging speed is improved, but device structure becomes more complex
Solution Approach 1:
The bit line-kick line configuration is applied locally in specific regions rather than uniformly across the entire memory cell array. In regions far from the sense amplifier where charging and discharging time loss is most significant, the bit line-kick line faces the upper surface of the bit line to provide capacitive coupling. In regions close to the sense amplifier, the configuration is adjusted to allow direct connection, thus applying the complexity-enhancing structure only where it provides the greatest benefit.
3Productivity
If uniform bit line configuration is used across all regions, then manufacturing is simpler, but read operation efficiency decreases due to regional variations in charging time
Solution Approach 1:
The wiring configuration is made dynamic by allowing the bit line-kick line to transition between different spatial relationships with the bit line along the first direction. The configuration changes from facing the upper surface (providing capacitive coupling) in regions far from the sense amplifier to allowing direct connection in regions close to the sense amplifier. This dynamic adaptation of the wiring configuration optimizes read operation efficiency across different regions while maintaining manufacturing feasibility through a systematic design pattern.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enables faster bit line charging and discharging, resulting in higher-speed read operations compared to conventional methods, with the bit line-kick line facilitating quicker voltage distribution across all bit lines, enhancing overall memory device performance.
Implementation Method 1
the bit line-kick line faces the upper surface of the bit line in regions far from the sense amplifier, allowing for capacitive coupling to accelerate charging and discharging
Data Source
AI summary
A semiconductor memory device includes first and second memory blocks arranged along a first direction, a first bit line extending in the first direction and including first and second portions respectively through which the first and second memory blocks are connected to the first bit line, a first sense amplifier connected to the first bit line, a first wiring which extends in a second direction intersecting the first direction, and overlaps the second portion of the first bit line when viewed in a third direction intersecting the first and second directions, and a controller which applies a first voltage to the first bit line, and a second voltage to the first wiring during a read operation. A first distance between the first sense amplifier and the first portion is shorter than a second distance between the first sense amplifier and the second portion.