3D Memory Bit Line Selector Layout for Lower Routing Load

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Solution Overview

Problem

The complexity of routing channels in CMOS wafers due to the presence of global bit lines and multiplexers in semiconductor devices leads to a high load on the global bit lines, complicating the circuit design.

Innovation Solution

The semiconductor device is structured with memory array and peripheral structures on different wafers, utilizing through silicon via (TSV) technology and hybrid bonding to connect local and global bit lines through selectors, allowing flexible positioning of global and local bit line selectors, reducing routing complexity and load.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Device complexity

If global bit lines and multiplexers are both placed in the CMOS wafer, then the circuit functionality is achieved, but the routing channels become complicated and the global bit line load increases

Engineering Contradiction:
Improverouting channel complexityVSAvoidglobal bit line load
Core Design Contradiction:
Device complexityVSReliability

Solution Approach 1:

The patent divides the bit line selection functionality into two separate segments: local bit line selectors are placed on the array wafer to handle local bit line connections, while global bit line selectors are placed on the CMOS wafer to handle global bit line connections. This segmentation separates the routing complexity from the global bit lines, simplifying their paths and reducing their load while maintaining complete circuit functionality.

Inventive Principle:
Principle #1Segmentation

2Ease of operation

If all selectors are placed on the CMOS wafer, then the control logic is simplified, but the routing channels in the CMOS wafer become complicated

Engineering Contradiction:
Improvecontrol logic simplicityVSAvoidrouting channel complexity
Core Design Contradiction:
Ease of operationVSDevice complexity

Solution Approach 1:

The patent segments the selector placement across two different wafers: local bit line selectors remain on the array wafer close to the memory strings, while global bit line selectors are moved to the CMOS wafer. This spatial segmentation allows control logic to be distributed appropriately, simplifying routing channels in the CMOS wafer while maintaining ease of operation through coordinated control of both selector groups.

Inventive Principle:
Principle #1Segmentation

3Device complexity

If local bit line selectors are moved to the peripheral structure, then the routing channels are simplified, but additional through holes and inter-wafer connections are required

Engineering Contradiction:
Improverouting channel complexityVSAvoidinter-wafer connection complexity
Core Design Contradiction:
Device complexityVSEase of manufacture

Solution Approach 1:

The patent transitions from a planar two-dimensional routing approach to a three-dimensional approach by utilizing vertical through holes (TSVs) that pass through the array wafer. Local bit line selectors are positioned in the peripheral structure and connect to local bit lines through vertically extending first through holes, while second through holes provide inter-wafer connections to the CMOS wafer. This dimensional change simplifies routing channels by using vertical interconnects instead of complex lateral routing.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This structure simplifies the routing channels, reduces the load on global bit lines, and enhances the response speed of the memory by minimizing signal transmission distances.

Implementation Method 1

utilizing through silicon via (TSV) technology and hybrid bonding to connect local and global bit lines through selectors

Methodology Applied
Scientific EffectConduction (electrical): Conduction (electrical)

Implementation Method 2

utilizing through silicon via (TSV) technology and hybrid bonding to connect local and global bit lines through selectors

Methodology Applied
Scientific EffectWelding: Welding

Data Source

PatentUS12354660B2Semiconductor devices
Publication Date: 2025.07.08 WUHAN XINXIN SEMICON MFG CO LTD
  • US12354660B2 patent drawing
  • US12354660B2 patent drawing
  • US12354660B2 patent drawing

AI summary

A semiconductor device includes a memory array structure and a peripheral structure. The memory array structure includes a plurality of memory strings, a plurality of local bit lines, and a plurality of global bit lines. The peripheral structure includes a plurality of local bit line selectors and one or more global bit line selectors. Each of the local bit lines is connected with at least one of the memory strings. Each of the local bit line selectors has an output terminal connected with ones of the local bit lines respectively through first through holes, and an input terminal connected with one of the global bit lines through a second through hole. Each of the global bit line selectors has an output terminal connected with ones of the global bit lines respectively through third through holes.