3D Memory Bit Line Layout for Lower Parasitic Capacitance
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Solution Overview
Problem
Existing semiconductor memory devices face challenges in reducing parasitic capacitance and noise due to close proximity of bit lines, which affects electrical performance and reliability.
Innovation Solution
The semiconductor memory device incorporates vertical semiconductor patterns connected to alternating bit lines and gate structures, arranged in a zigzag pattern to prevent simultaneous activation of adjacent bit lines, thereby reducing parasitic capacitance and noise.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of stationary object
If bit lines are arranged in close proximity to increase integration density, then area utilization is improved, but parasitic capacitance and noise increase
Solution Approach 1:
The patent transitions from a planar bit line arrangement to a three-dimensional configuration where vertical semiconductor patterns extend in a first direction, bit lines extend in a second direction perpendicular to the first, and gate structures extend in a third direction perpendicular to both. This spatial reorganization reduces parasitic capacitance between adjacent bit lines while maintaining high integration density through the vertical channel structure.
Solution Approach 2:
The patent employs an asymmetric alternating arrangement where odd-numbered bit lines are electrically connected to first vertical semiconductor patterns and even-numbered bit lines are electrically connected to second vertical semiconductor patterns. This asymmetric connection pattern, combined with the zigzag arrangement of gate structures, prevents simultaneous activation of adjacent bit lines, thereby reducing noise and parasitic capacitance effects.
2Reliability
If additional shielding patterns are added to reduce parasitic capacitance, then electrical characteristics are improved, but device complexity increases
Solution Approach 1:
The patent extracts and eliminates the need for additional shielding patterns by fundamentally reconfiguring the bit line arrangement. Through the vertical semiconductor pattern structure and alternating connection scheme, the harmful parasitic capacitance is reduced intrinsically without requiring extra shielding components, thereby improving electrical characteristics while maintaining device simplicity.
3Area of stationary object
If vertical channel transistors are used to increase integration density, then area is reduced, but manufacturing precision requirements increase
Solution Approach 1:
The patent segments the bit lines into odd-numbered and even-numbered groups with distinct electrical connections to different vertical semiconductor patterns. This segmentation creates a modular structure where each group can be independently managed, reducing the overall manufacturing precision requirements while maintaining high integration density through the vertical channel architecture.
Data Source
AI summary
A semiconductor memory device may include vertical semiconductor patterns extending in a first direction, a plurality of bit lines on lower surfaces of the vertical semiconductor patterns, each of the bit lines extending in a second direction that is perpendicular to the first direction, and a plurality of first gate structures on first side surfaces of the vertical semiconductor patterns, each of the first gate structures extending in a third direction that is perpendicular to the first direction and intersects the second direction. The bit lines may include odd-numbered bit lines and even-numbered bit lines that are alternately arranged with one another along the third direction. First ones of the vertical semiconductor patterns that are electrically connected to the even-numbered bit lines may be laterally offset from second ones of the vertical semiconductor patterns that are electrically connected to the odd-numbered bit lines.