Semiconductor Memory Block Decoder Area Reduction

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Solution Overview

Problem

Conventional semiconductor memory devices require multiple block decoders for each memory cell block, leading to increased area occupation and reduced integration levels, especially in high-capacity flash memory devices.

Innovation Solution

A semiconductor memory device design where a single block decoder controls two memory cell blocks, utilizing a control signal generator, precharge units, and enable units to generate and manage block select signals, reducing the need for multiple decoders and enhancing integration.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If multiple block decoders are used for each memory cell block, then each block can be controlled independently, but the area occupied by block decoders increases and integration level decreases

Engineering Contradiction:
Improveblock control independenceVSAvoidarea occupied by block decoders
Core Design Contradiction:
ReliabilityVSArea of stationary object

Solution Approach 1:

A single block decoder is designed to control multiple memory cell blocks (first and second blocks) through shared control signals. The block decoder generates block select signals that can independently select different blocks, allowing one decoder to perform the function of multiple decoders would have performed, thereby reducing the total area occupied by decoder circuits while maintaining independent block control capability

Inventive Principle:
Principle #6Universality (Multi-functionality)

Solution Approach 2:

The patent combines multiple block decoder functions into a single integrated block decoder unit. By merging the control logic and signal generation capabilities for multiple blocks into one decoder, the design eliminates redundant decoder circuits and reduces the overall area occupied by block decoders in the memory device

Inventive Principle:
Principle #5Merging (Combining)

2Ease of operation

If multiple block decoders are used for each memory cell block, then block control is simplified, but device complexity increases

Engineering Contradiction:
Improveblock control simplicityVSAvoidnumber of block decoders
Core Design Contradiction:
Ease of operationVSDevice complexity

Solution Approach 1:

The block decoder is designed as a universal control unit that can select and control any of the multiple memory cell blocks through shared control signals. This multi-functional design simplifies the overall device complexity by replacing multiple specialized decoders with one versatile decoder that handles all block selection tasks

Inventive Principle:
Principle #6Universality (Multi-functionality)

3Area of stationary object

If a single block decoder controls two memory cell blocks, then area occupation is reduced and integration level is improved, but control signal management becomes more complex

Engineering Contradiction:
Improvearea occupied by block decodersVSAvoidcontrol signal management
Core Design Contradiction:
Area of stationary objectVSDevice complexity

Solution Approach 1:

The block decoder internally segments control signals for different memory blocks through separate control signal lines (first block select signal and second block select signal). This segmentation allows the single decoder to manage multiple blocks independently by generating distinct control signals for each block, simplifying the management of control signals while maintaining area efficiency

Inventive Principle:
Principle #1Segmentation

Data Source

PatentUS7646640B2Semiconductor memory device
Publication Date: 2010.01.12 SK HYNIX INC
  • US7646640B2 patent drawing
  • US7646640B2 patent drawing
  • US7646640B2 patent drawing

AI summary

A semiconductor memory device includes first and second memory cell blocks, a block decoder, and first and second block switches. The first and second memory cell blocks have a plurality of memory cells connected in a string structure and are respectively disposed in neighboring planes. The block decoder outputs first and second block select signals in response to pre-decoded address signals and first and second plane select signals, which are respectively enabled according to an enable state of the planes. The first and second block switches connect global word lines to word lines of the first and second memory cell blocks in response to the first and second block select signals, respectively.