Memory Block Separation Structure Against Fluorine Gas Erosion
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Solution Overview
Problem
Existing semiconductor memory devices face issues with fluorine gas-induced erosion of oxide films between memory blocks, leading to potential short circuits and interference with adjacent blocks.
Innovation Solution
Incorporation of a first separation region made of a conductor covered with an insulating film to separate memory blocks, preventing fluorine gas erosion and maintaining structural integrity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If memory blocks are separated using only oxide films, then the device structure remains simple, but fluorine gas erosion causes short circuits and interference between adjacent blocks
Solution Approach 1:
The separation region is constructed as a composite structure with two distinct layers: a lower oxide film layer and an upper insulating film layer. This composite material approach combines the benefits of both materials - the oxide film provides good electrical isolation properties while the upper insulating film (such as nitride film) provides resistance to fluorine gas erosion, thereby preventing short circuits between adjacent memory blocks without significantly complicating the device structure
Solution Approach 2:
The lower oxide film layer is formed first as a preliminary protective barrier before the upper insulating film layer is added. This preliminary action of creating the oxide film foundation provides initial electrical isolation, and then the upper insulating film is deposited to provide additional protection against fluorine gas erosion during subsequent manufacturing processes
Data Source
AI summary
According to an embodiment, a semiconductor memory device includes a first conductive layer and second conductive layers arranged at intervals in a first direction above the first conductive layer. A semiconductor layer extends in the first direction in the second conductive layers to be in contact with the first conductive layer. A charge storage layer is between the semiconductor layer and the second conductive layers. A metal layer extends in the first direction and a second direction above the first conductive layer, and separates the second conductive layers. The device further includes an insulating layer. The insulating layer includes a portion between the metal layer and the first conductive layer and a portion between the metal layer and the second conductive layers.