Semiconductor Memory Block Layout and Data Line Routing Optimization
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Solution Overview
Problem
Current semiconductor memory devices face challenges in maintaining performance and reliability due to increased memory capacity and integration density, leading to uneven data line sense amplifier efficiency and longer data paths, which affect access times, especially in synchronous DRAMs.
Innovation Solution
The semiconductor memory device is designed with optimized memory block layouts and data line routing, dividing memory banks into sub-banks and utilizing additional I/O buses on existing metal layers to shorten data paths and ensure uniform sensing efficiency across all memory blocks.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If memory capacity is increased and integration density is increased, then storage capacity is improved, but data line length increases and sense amplifier efficiency becomes uneven
Solution Approach 1:
The memory device is divided into multiple memory banks (first memory bank, second memory bank, third memory bank, fourth memory bank) arranged in a 2x2 grid. Each bank is further divided into sub-banks with dedicated data line routing. This segmentation allows data lines to serve smaller, localized regions rather than spanning the entire chip, reducing data line length while maintaining high memory capacity through parallel bank organization.
Solution Approach 2:
Data lines are routed in multiple directions (first direction and second direction perpendicular to the first) across different memory banks. This multi-dimensional routing approach allows data to reach sense amplifiers through shorter paths by utilizing both horizontal and vertical routing dimensions, rather than relying on single-direction long-distance routing.
2Speed
If data line length is reduced, then access speed is improved, but chip area utilization becomes more challenging
Solution Approach 1:
Sense amplifiers are strategically positioned at intersections where data lines from multiple directions converge. Multiple data lines from different memory banks share common sense amplifier resources, reducing the need for dedicated sense amplifiers at every data line endpoint. This merging approach maintains short data line lengths for fast access while improving chip area utilization by reducing redundant sense amplifier instances.
Solution Approach 2:
Each sense amplifier is designed to handle data from multiple data lines and multiple memory banks. The sense amplifiers serve universal functions across different banks and directions, allowing a single sense amplifier to replace what would traditionally require multiple dedicated sense amplifiers, thereby improving area efficiency while maintaining fast access speeds.
3Reliability
If sense amplifier efficiency is made uniform across all memory blocks, then reliability is improved, but data line routing complexity increases
Solution Approach 1:
The memory device employs asymmetric data line routing where data lines extend in both first and second directions from central regions toward peripheral sense amplifier regions. This asymmetric layout allows data lines to reach sense amplifiers at optimized distances regardless of which memory bank they originate from, ensuring uniform sense amplifier efficiency across all banks while managing routing complexity through systematic directional extensions.
4Use of energy by moving object
If hierarchical memory bank architecture is used, then power consumption is reduced, but data path length increases
Solution Approach 1:
The patent implements local data line routing where each memory bank has dedicated data lines that terminate at sense amplifiers located in adjacent peripheral regions. This local quality approach ensures that data paths remain short and localized within each bank-subbank structure, preventing the accumulation of long data paths that would occur in hierarchical architectures where data must traverse multiple levels of abstraction.
Data Source
AI summary
Multi-bank semiconductor memory devices are provided having optimized memory block layouts and data line routing to enable chip size reduction and increase operating memory access speed.