Semiconductor Memory Block Select Transistor Segmentation
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Solution Overview
Problem
Existing semiconductor memory devices face challenges in efficiently managing voltage differences between adjacent block select transistors, leading to potential insulation breakdown and increased circuit area, which complicates the integration of block select circuits and increases manufacturing costs.
Innovation Solution
The semiconductor memory device configuration includes block select transistors corresponding to the same memory block, reducing the area of insulating regions and allowing simultaneous voltage transfer to adjacent memory blocks, thereby suppressing voltage differences and circuit area expansion.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If block select transistors are arranged adjacently for different memory blocks, then circuit integration is improved, but voltage differences between adjacent transistors cause insulation breakdown and reliability degradation
Solution Approach 1:
The patent divides the block select transistor array into groups, where transistors for the same memory block are segmented together and positioned adjacently. This segmentation allows voltage transfer to multiple transistors simultaneously while maintaining proper voltage levels, thus improving circuit integration without causing insulation breakdown between adjacent transistors with different voltage potentials.
Solution Approach 2:
The patent creates equipotential regions by positioning transistors that receive the same voltage simultaneously adjacent to each other. This equipotential arrangement eliminates voltage differences between adjacent transistors, preventing insulation breakdown while maintaining high circuit integration. The control circuit transfers voltage to multiple transistors at the same time, ensuring they remain at the same potential.
2Reliability
If insulating regions are enlarged to prevent insulation breakdown, then reliability is improved, but circuit area increases and manufacturing cost increases
Solution Approach 1:
By arranging transistors at the same voltage potential adjacent to each other, the patent eliminates the need for enlarged insulating regions. The equipotential arrangement ensures that no voltage difference exists between adjacent transistors, so standard-sized insulating regions are sufficient to prevent breakdown, thus maintaining small circuit area while ensuring reliability.
Solution Approach 2:
The patent changes the voltage parameter arrangement by grouping transistors that receive the same voltage together in space. This parameter change (voltage grouping) allows the use of minimal insulating regions since the voltage difference across adjacent transistor gates is zero, thereby reducing circuit area while maintaining reliability.
3Area of stationary object
If block select transistors for different memory blocks are positioned adjacently, then circuit area is reduced, but voltage transfer efficiency decreases due to sequential voltage application
Solution Approach 1:
The patent segments the block select transistor control into groups corresponding to different memory blocks, with each group's transistors positioned adjacently. This segmentation enables the control circuit to transfer voltage to all transistors in a group simultaneously through shared control lines, improving voltage transfer efficiency while maintaining compact circuit area.
Solution Approach 2:
The patent merges the control of multiple transistors by positioning them adjacently and connecting them to common control lines. This merging allows simultaneous voltage transfer to multiple transistors, improving productivity while maintaining small circuit area. The adjacent positioning enables efficient signal distribution to grouped transistors.
Data Source
AI summary
A semiconductor device includes: a semiconductor substrate; a plurality of transistors provided on a surface of the semiconductor substrate; and a first circuit electrically connected to gate electrodes of the plurality of transistors. The plurality of transistors include: a first transistor and a second transistor that are adjacent via an insulating region in a first direction; a third transistor that is adjacent to the first transistor and the second transistor via the insulating region in a second direction intersecting the first direction; and a fourth transistor that is adjacent to the first transistor and the second transistor via the insulating region in the second direction. The first circuit sets the first through fourth transistors to an ON state according to a first signal.