3D Memory Block Trench Layout for Stress-Relief Separation
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Solution Overview
Problem
Current semiconductor memory devices face challenges in manufacturing due to compressive stress and distortion of hollow structures during the formation of trenches, leading to variations in structure dimensions and potential substrate breakage during the etching process.
Innovation Solution
The implementation of additional trenches (STAY1) that intersect with primary trenches (STAX1) allows for the release of compressive stress and separation of structures, reducing distortion and substrate damage by fixing positional relationships through insulating layers, thereby improving manufacturing precision.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If trenches are formed in the substrate to create memory blocks, then memory block separation is achieved, but compressive stress and distortion occur in the hollow structures leading to substrate breakage
Solution Approach 1:
The substrate is divided into multiple memory blocks by forming trenches that extend from the surface toward the substrate thickness direction. These trenches physically separate the hollow structures into distinct memory blocks while maintaining substrate integrity through careful control of trench depth and positioning.
Solution Approach 2:
An insulating layer is introduced as an intermediary substance filling the trenches and covering the hollow structures. This insulating layer acts as a mediator that releases compressive stress from the hollow structures, prevents substrate breakage, and maintains the positional relationships between memory blocks during subsequent manufacturing processes.
2Reliability
If additional trenches are formed to release compressive stress, then substrate breakage is prevented, but manufacturing process complexity increases
Solution Approach 1:
The formation of additional trenches and insulating layers is merged with the existing memory block formation process. The same trench formation techniques and insulating layer deposition processes used for memory block separation are also applied to stress relief trenches, combining multiple functions into a unified manufacturing flow.
Solution Approach 2:
The insulating layer serves multiple functions simultaneously: it fills the trenches to provide mechanical support, releases compressive stress from hollow structures, prevents substrate breakage, and maintains positional relationships between memory blocks. This multi-functionality reduces the need for additional specialized process steps.
Data Source
AI summary
A semiconductor memory device includes: two memory blocks; a first structure disposed between the two memory blocks; and a second structure separated from the two memory blocks, or a plurality of second structures. The two memory blocks include a plurality of first conductive layers and a plurality of first insulating layers alternately arranged. The first structure has one end, and the one end is closer to the substrate than the plurality of first conductive layers are. The second structure has one end, and the one end is closer to the substrate than at least apart of the first conductive layers among the plurality of first conductive layers is. Another end of the first structure and another end of the second structure are farther from the substrate than the plurality of first conductive layers are. The second structure is separated from the first structure.