Memory Block Family Combination Using Temperature and Voltage
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Conventional memory sub-systems fail to effectively manage temperature-related voltage variations in block families, leading to increased bit error rates and calibration issues due to the combination of block families based solely on voltage characteristics without considering program temperature.
Innovation Solution
Implementing a memory sub-system that combines block families based on temperature levels, recording and comparing temperature levels to determine suitable combinations, which addresses temperature compensation miscalibrations and voltage variations, and optimizes memory space by reducing the number of block families.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If block families are combined based solely on voltage characteristics, then the number of block families is reduced and memory space is optimized, but temperature-related voltage variations cause increased bit error rates and calibration issues
Solution Approach 1:
The patent changes the combination criteria from solely voltage characteristics to include both voltage characteristics and temperature levels. By adding temperature as an additional parameter for block family combination, the system maintains more accurate voltage distribution groupings while still reducing the total number of block families compared to managing each block individually.
Solution Approach 2:
The patent segments block families into subsets based on similar voltage distributions and temperature levels. This segmentation allows for selective calibration of smaller subsets rather than calibrating all blocks together, improving calibration accuracy while reducing the computational burden and memory space requirements.
2Volume of stationary object
If block families are combined based solely on voltage characteristics, then memory space is optimized, but calibration accuracy deteriorates due to temperature variations
Solution Approach 1:
The patent adds temperature level as an additional parameter for block family combination, creating more precise groupings that account for both voltage characteristics and thermal conditions. This results in smaller, more homogeneous subsets that require less memory for metadata storage while improving calibration accuracy.
Solution Approach 2:
The patent applies different combination criteria to different block families based on their specific voltage and temperature characteristics. Each block family is grouped with others that have similar local properties, allowing for targeted calibration approaches that are optimized for each subset's specific conditions.
3Volume of stationary object
If the number of block families is reduced, then memory space is freed up, but voltage distribution variations within combined families increase calibration difficulty
Solution Approach 1:
The patent uses both voltage characteristics and temperature levels as combination parameters, which creates more homogeneous subsets despite reducing the total number of block families. This dual-parameter approach ensures that blocks within each family have similar voltage distributions, simplifying calibration while still freeing up memory space.
Solution Approach 2:
The patent implements a feedback mechanism where block families are continuously monitored and recombined based on their voltage and temperature characteristics. This allows the system to adapt to changing conditions and maintain optimal calibration groupings, reducing calibration complexity even as the number of block families is reduced.
Data Source
AI summary
A system including a memory device and a processing device, the processing device to identify a first temperature level of a first set of memory blocks associated with the memory device, and a second temperature level of a second set of memory blocks associated with the memory device, and determine that a condition is satisfied based on a comparison of the first temperature level, the second temperature level, and an adjustable threshold level. In response to the condition being satisfied, the processing device is to combine the first set of memory blocks and the second set of memory blocks to generate a combined set of memory blocks.