Memory Block Threshold Voltage Adjustment for Retention Errors
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Solution Overview
Problem
Conventional memory data management methods incur significant time wastage and decreased system performance due to the need for a new programming process when error bits exceed a threshold, leading to inefficient data migration and retention errors.
Innovation Solution
A memory data management method that involves reading data from memory cells, determining error bits exceeding an ECC threshold, and executing a programming process to increase threshold voltages for error state data, employing a fast adjusting mode to improve retention error rates and a reliable mode to enhance retention ability by adjusting voltages using one shot programming and bias selection.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If data is moved to a new memory block when error bits exceed threshold, then data reliability is improved, but system performance deteriorates due to time-consuming programming process
Solution Approach 1:
The patent changes the voltage parameter of existing data in the current memory block to correct retention errors. Instead of moving data to a new block, the system adjusts the threshold voltage of the memory cells to reposition the data states, thereby maintaining data reliability while avoiding the time-consuming programming process of data relocation.
2Reliability
If a new programming process is executed to store data in a new memory block, then data integrity is improved, but time consumption increases significantly
Solution Approach 1:
The patent performs preliminary voltage adjustment on data that shows signs of retention errors before the errors become critical. By detecting and correcting retention errors early through voltage adjustment, the system prevents the need for time-consuming data relocation to new memory blocks, thus maintaining data integrity while minimizing time loss.
3Reliability
If data is corrected and stored in a new memory block, then error correction capability is improved, but operational efficiency deteriorates
Solution Approach 1:
The patent extracts and corrects only the affected data states within the current memory block by adjusting their voltage levels, rather than extracting and relocating entire data blocks. This selective correction approach maintains error correction capability while significantly improving operational efficiency by avoiding unnecessary data movement.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method effectively improves retention error rates and enhances retention ability by efficiently managing error states through voltage adjustments, reducing the need for extensive data migration and maintaining system performance.
Implementation Method 1
a programming process being executed to increase a first threshold voltage of a first state data of the data for exceeding a first threshold, to increase a second threshold voltage of a second state data of the data for exceeding a second threshold, and to increase a third threshold voltage of a third state data of the data for exceeding a third threshold
Data Source
AI summary
A memory data management method includes the following steps reading a plurality of data of a plurality of memory cells of a memory block; determining whether error bits of the data exceed an error correction code (ECC) threshold; if the error bits of the data exceed the ECC threshold, a programming process being executed to increase a first threshold voltage of a first state data of the data for exceeding a first threshold, to increase a second threshold voltage of a second state data of the data for exceeding a second threshold, and to increase a third threshold voltage of a third state data of the data for exceeding a third threshold.