Semiconductor Memory Block Voltage Transfer via Segmented Well Regions

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Solution Overview

Problem

Current semiconductor devices face challenges in efficiently transferring operating voltages to selected memory blocks, particularly in improving the transfer characteristics of negative voltages, which affects the program operation and data storage in memory cells.

Innovation Solution

The semiconductor device includes first and second connection circuits formed in isolated well regions of a substrate to electrically couple local select lines and word lines to global select lines and word lines, respectively, using transistors that respond to block selection signals, thereby improving the transfer of operating voltages without voltage drop.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If connection circuits are used to transfer operating voltages to selected memory blocks, then data storage operation is enabled, but voltage transfer characteristics deteriorate due to voltage drop

Engineering Contradiction:
Improvevoltage transfer characteristicsVSAvoidvoltage drop
Core Design Contradiction:
ReliabilityVSLoss of energy

Solution Approach 1:

The substrate is divided into multiple isolated well regions, with each region containing connection circuits for a specific memory block. This segmentation allows independent voltage delivery to each block without interference, improving voltage transfer characteristics by eliminating cross-block voltage drops.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

Isolated well regions serve as intermediaries between the voltage source and memory blocks. Each well region acts as an independent voltage delivery zone, mediating the voltage transfer to reduce overall voltage drop and improve signal integrity.

Inventive Principle:
Principle #24Intermediary (Mediator)

2Productivity

If connection circuits are restructured to improve negative voltage transfer, then program operation characteristics improve, but device complexity increases

Engineering Contradiction:
Improveprogram operation efficiencyVSAvoidconnection circuit structure
Core Design Contradiction:
ProductivityVSDevice complexity

Solution Approach 1:

The connection circuits are segmented into separate well regions for select lines and word lines. This segmentation allows independent optimization of each circuit's structure for its specific function, improving program operation efficiency without requiring complete redesign of the entire connection system.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

Different well regions are assigned different functions with specific voltage delivery characteristics tailored to local requirements. The first well region handles select line connections while the second handles word line connections, allowing each to be optimized for its specific program operation needs.

Inventive Principle:
Principle #3Local quality

Data Source

PatentUS9455009B2Operating characteristics of a semiconductor device
Publication Date: 2016.09.27 SK HYNIX INC
  • US9455009B2 patent drawing
  • US9455009B2 patent drawing
  • US9455009B2 patent drawing

AI summary

Provided is a semiconductor device. The semiconductor device includes memory blocks including select transistors electrically coupled to local select lines and memory cells electrically coupled to local word lines, a first connection circuit configured to electrically couple the local select lines of a selected memory block and global select lines according to a block select signal, and formed in a first well region of a substrate, and a second connection circuit configured to electrically couple the local word lines of the selected memory block and global word lines according to the block selection signal, and formed in a second well region of the substrate.