Non-Volatile Memory Blocking Layer Diffusion Barrier
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Solution Overview
Problem
Conventional non-volatile memory devices with metal oxide layers between silicon oxide layers experience increased material diffusion, leading to deteriorated interface morphology and higher leakage current, reducing their operability and reliability.
Innovation Solution
A method of manufacturing a non-volatile memory device with a blocking layer comprising a lower silicon oxide layer, a silicon oxynitride layer formed through nitridation treatment, a metal oxide layer with a higher dielectric constant, and an upper silicon oxide layer, along with an optional metal oxynitride or second silicon oxynitride layer, to minimize diffusion and improve interface morphology.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Force
If a metal oxide layer is used between two silicon oxide layers in the blocking layer, then the dielectric constant is improved, but material diffusion increases and interface morphology deteriorates
Solution Approach 1:
A silicon oxynitride layer is introduced as an intermediary layer between the metal oxide layer and the silicon oxide layers. This intermediate layer prevents direct contact between the metal oxide and silicon oxide, thereby blocking material diffusion while maintaining the high dielectric constant benefit of the metal oxide layer. The silicon oxynitride layer acts as a diffusion barrier that preserves interface morphology.
Solution Approach 2:
The blocking layer is structured as a composite multilayer system comprising silicon oxide layers, metal oxide layer, and silicon oxynitride layers. This composite structure combines the high dielectric constant property of metal oxide with the diffusion barrier properties of silicon oxynitride, achieving both electrical performance and interface stability.
2Force
If a metal oxide layer is used between two silicon oxide layers in the blocking layer, then the dielectric constant is improved, but leakage current increases
Solution Approach 1:
The silicon oxynitride layer serves as a mediator that prevents harmful material diffusion between the metal oxide and silicon oxide layers. By blocking diffusion, it prevents the formation of defect states at the interface that would otherwise increase leakage current, while allowing the metal oxide layer to maintain its high dielectric constant for efficient charge storage.
3Force
If a metal oxide layer is used between two silicon oxide layers in the blocking layer, then the dielectric constant is improved, but operability and reliability decrease
Solution Approach 1:
The silicon oxynitride layer acts as a protective intermediary that prevents material diffusion and maintains stable interfaces, thereby ensuring reliable device operation. It preserves the benefits of the high dielectric constant metal oxide layer while eliminating the reliability issues caused by interfacial degradation.
Solution Approach 2:
The composite blocking layer structure combines materials with complementary properties: silicon oxide for stability, metal oxide for high dielectric constant, and silicon oxynitride for diffusion barrier functionality. This composite approach achieves both high performance and reliability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The approach significantly reduces leakage current through the blocking layer, enhancing the reliability and performance of non-volatile memory devices by preventing material diffusion and maintaining a stable interface morphology.
Implementation Method 1
treating a surface portion of the lower silicon oxide layer with a nitridation treatment to form a first silicon oxynitride layer on the lower silicon oxide layer
Implementation Method 2
employing a metal oxide having a higher dielectric constant than silicon nitride
Data Source
AI summary
A method of manufacturing a non-volatile memory device includes forming a tunnel isolation layer forming a tunnel isolation layer on a substrate, forming a conductive pattern on the tunnel isolation layer, forming a lower silicon oxide layer on the conductive pattern, treating a surface portion of the lower silicon oxide layer with a nitridation treatment to form a first silicon oxynitride layer on the lower silicon oxide layer, forming a metal oxide layer on the first silicon oxynitride layer, forming an upper silicon oxide layer on the metal oxide layer, and forming a conductive layer on the upper silicon oxide layer.