Memory Body Bias Switching for Leakage Current Reduction
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Solution Overview
Problem
Semiconductor memory devices face challenges in reducing leakage current while maintaining efficient operation, especially as demand increases for faster access, higher data capacity, and lower power consumption.
Innovation Solution
The implementation of a memory device that applies a reverse body bias (RBB) voltage to circuits not in use during normal operation, thereby increasing the threshold voltage and reducing leakage current.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Loss of energy
If normal body bias voltage is applied to all circuits, then operational circuits function properly, but non-operational circuits consume leakage current
Solution Approach 1:
The patent applies different body bias voltages to different circuits based on their operational state. Specifically, reverse body bias voltage is applied to non-operational circuits to reduce leakage current, while normal or forward body bias voltage is applied to operational circuits to maintain proper function. This local differentiation resolves the contradiction by tailoring the bias voltage to the specific needs of each circuit segment.
Solution Approach 2:
The patent dynamically adjusts the body bias voltage applied to circuits based on their operational status. The body bias generator receives control signals that indicate whether a circuit is operational or non-operational, and accordingly switches between normal body bias voltage and reverse body bias voltage. This dynamic adjustment allows the system to optimize leakage current reduction while maintaining reliability when needed.
2Loss of energy
If reverse body bias voltage is applied to reduce leakage current, then power consumption decreases, but threshold voltage increases which may affect circuit operation
Solution Approach 1:
The patent applies reverse body bias voltage only to non-operational circuits where high threshold voltage is acceptable, while operational circuits receive normal or forward body bias voltage to maintain appropriate threshold levels for proper function. This localized application resolves the contradiction by ensuring RBB is used only where it won't compromise circuit operability.
Solution Approach 2:
The system dynamically switches between reverse body bias voltage and normal/forward body bias voltage based on the operational state of circuits. When a circuit transitions from operational to non-operational, the body bias voltage is adjusted accordingly. This dynamic control ensures that threshold voltage increases from RBB are applied only when the circuit is not actively being used, maintaining ease of operation when needed.
3Loss of energy
If body bias voltage is dynamically adjusted, then leakage current is reduced, but control complexity increases
Solution Approach 1:
The patent divides the body bias control into separate manageable components: a body bias generator that produces the bias voltages, control circuits that determine operational status of individual circuits, and switching mechanisms that apply the appropriate bias voltage to each circuit. This segmentation allows complex dynamic control to be implemented through modular, independently controllable units, reducing overall system complexity.
Solution Approach 2:
The body bias generator is designed to provide multiple types of body bias voltage (normal body bias voltage and reverse body bias voltage) using a single integrated circuit. This multi-functional approach eliminates the need for separate bias voltage generation circuits for different operational states, thereby reducing control complexity while still enabling dynamic adjustment of leakage current.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively minimizes leakage current, enhancing the reliability and performance of semiconductor memory devices by dynamically adjusting the body bias voltage.
Implementation Method 1
a reverse body bias (RBB) voltage to a circuit that is not used during a normal operation of the memory device... effectively minimizes leakage current, enhancing the reliability and performance of semiconductor memory devices by dynamically adjusting the body bias voltage
Data Source
AI summary
A memory device for reducing leakage current is provided. The memory device includes a function circuit including a plurality of semiconductor devices and a body bias generator that provides body bias voltages to body terminals of the plurality of semiconductor devices. The function circuit includes a first circuit, a second circuit, and first to fourth switches. The first switch is connected between the first circuit and a first node to which the body bias voltage is applied. The second switch is connected between the second circuit and a first node. The third switch is connected between the first circuit and a second node to which a supply voltage is applied. The fourth switch is connected between the second circuit and the second node. The switches are controlled by a control signal. The device threshold voltage is increased by the applied body bias voltage thereby reducing leakage current.