3D Memory Verification via Localized Boosting Interruption
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Solution Overview
Problem
In 3D stacked non-volatile memory devices, the process of verifying programming can be slowed down due to the need to interrupt boosting to mitigate hot electron injection disturbs, which affects performance, as not all memory cells require the same level of interruption.
Innovation Solution
Customizing the interruption of boosting based on the position of memory cells to minimize interruption and prevent hot electron injection disturbs, by applying voltages and compare signals differently to selected and unselected memory cells during the verification process.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If boosting is interrupted to mitigate hot electron injection disturbs, then reliability is improved, but productivity deteriorates
Solution Approach 1:
The patent applies different boosting interruption strategies to different memory cell groups based on their position. First sub-groups of memory cells have their boosting interrupted for a first duration, while second sub-groups have boosting interrupted for a second duration that is shorter than the first duration. This localized differentiation allows the system to mitigate hot electron injection disturbs where needed while maintaining faster verification speeds for cells less susceptible to the disturbance.
2Reliability
If boosting is interrupted for all memory cells, then reliability is improved, but productivity deteriorates further
Solution Approach 1:
The patent differentiates between first sub-groups and second sub-groups of memory cells, applying longer boosting interruption durations to first sub-groups and shorter durations to second sub-groups. This localized approach ensures that cells most vulnerable to hot electron injection disturbs receive adequate protection while allowing faster verification for other cells, thereby maintaining overall programming speed.
Solution Approach 2:
The memory cell population is segmented into first sub-groups and second sub-groups with different verification characteristics. This segmentation allows the system to apply differentiated boosting interruption strategies, preventing uniform treatment that would unnecessarily slow down the entire verification process while still protecting vulnerable cells.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances the verification process efficiency by reducing the duration of voltage spikes on unselected select lines, balancing performance with the severity of hot electron injection disturbs across different word lines, thereby improving overall programming speed and accuracy.
Implementation Method 1
interrupting the boosting can result in a hot electron injection disturb; therefore, the boosting can be temporarily interrupted to mitigate the hot electron injection disturb
Data Source
AI summary
A non-volatile memory system includes one or more control circuits configured to program memory cells and verify the programming. The verifying of the programmed memory cells includes applying one or more voltages to perform boosting of a channel region associated with unselected memory cells, allowing the boosting of the channel region for a portion of time while applying the one or more voltages, preventing/interrupting the boosting of the channel region while applying the one or more voltages for a duration of time based on position of a memory cell selected for verification, applying a compare signal to the memory cell selected for verification, and performing a sensing operation for the memory cell selected for verification in response to the compare signal.