Memory Boot Reads Using Write-Temperature Metadata
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Solution Overview
Problem
Memory systems experience cross-temperature exposure during access operations, leading to increased latency and incorrect data reading, particularly during boot sequences, due to the temperature difference between write and read operations, which can result in timeouts and application failures.
Innovation Solution
The memory system maintains a table associating logical block addresses with write temperatures for boot sequence data, allowing the memory system controller to select appropriate read settings based on the current operating temperature, enabling a single read operation to retrieve data and reduce latency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If multiple read operations with various reference voltage levels are applied to read data written at extreme temperatures, then data reading accuracy is improved, but access latency increases
Solution Approach 1:
The patent applies preliminary action by storing the write temperature of data in a temperature metadata table during the write operation. This pre-stored temperature information is then used during read operations to directly select the appropriate reference voltage level without needing to perform multiple read attempts, thereby resolving the contradiction between reading accuracy and access latency.
2Reliability
If multiple read operations are performed to correctly read data affected by cross-temperature exposure, then data reading reliability is improved, but boot sequence time increases
Solution Approach 1:
The patent stores write temperature information in advance in a temperature metadata table, allowing the read operation to directly select the appropriate reference voltage based on pre-stored temperature data. This eliminates the need for multiple read attempts during boot sequence, thereby maintaining reading reliability while reducing boot sequence time.
3Measurement precision
If multiple read operations with different reference voltage levels are applied, then correct data retrieval is improved, but processing time increases
Solution Approach 1:
The patent pre-stores write temperature information in a temperature metadata table during data programming. During read operations, the controller directly queries this pre-stored temperature data to select the appropriate reference voltage level, eliminating the need for multiple read attempts with different voltage levels. This resolves the contradiction by maintaining accurate data retrieval while significantly improving processing speed.
Data Source
AI summary
Methods, systems, and devices for techniques for managing cross-temperature exposure in memory systems are described. A memory system controller may identify, during a boot sequence, a temperature associated with a write operation at a logical block address (LBA) of a first memory device, where the LBA is associated with a physical address of the first memory device that stores a portion of boot sequence data. The memory system controller may select a read setting based on a difference between an operating temperature of the first memory device during the boot sequence and the temperature associated with the write operation at the LBA of the first memory device. Accordingly, the memory system controller may perform a read operation to read the portion of the boot sequence data from the physical address associated with the LBA according to the read setting.