Memory Contact Buffer Column Structure Against Delamination
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Solution Overview
Problem
The existing memory structures face issues of delamination between the conductive column and the capacitive structure, leading to increased contact resistance and unstable power supply voltage, especially under external and internal stress.
Innovation Solution
The proposed memory structure includes a buffer column spaced apart from the conductive column, which is in contact with the metal layer and extends towards the upper electrode layer, thereby sharing partial stress and improving the stability of the connection between the conductive column and the upper electrode layer.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a conductive column is directly connected to the upper electrode layer, then the contact resistance is reduced, but the connection stability deteriorates due to delamination under stress
Solution Approach 1:
The buffer column is positioned adjacent to the conductive column to provide preemptive stress absorption and distribution. This cushioning structure prevents delamination by absorbing thermal expansion forces and mechanical stress before they can cause damage to the conductive column-electrode layer interface, thereby maintaining connection stability without increasing contact resistance.
Solution Approach 2:
The buffer column acts as an intermediary element between the conductive column and the surrounding structure. It mediates the stress transmission by providing a compliant interface that absorbs differential thermal expansion and mechanical stress, preventing direct stress concentration at the conductive column-electrode layer interface and eliminating the delamination problem.
2Reliability
If the conductive column is made larger to improve connection stability, then the contact area increases, but the device complexity and manufacturing difficulty increase
Solution Approach 1:
The stress management function is segmented from the conductive column by introducing a separate buffer column structure. This allows the conductive column to maintain its original optimized dimensions for electrical performance, while the buffer column independently handles stress absorption, thereby improving connection stability without increasing the complexity or dimensions of the conductive column itself.
Solution Approach 2:
The buffer column serves as an intermediary structure that provides stress management without requiring modification of the conductive column. This mediator approach maintains the simplicity of the original conductive column design while adding a dedicated stress-absorption element, avoiding the need to enlarge or complicate the conductive column structure.
3Reliability
If the conductive column is made larger to reduce contact resistance, then the contact area increases, but the manufacturing precision requirements increase
Solution Approach 1:
The functions of electrical conduction and stress management are segmented into separate structures. The conductive column maintains its optimized cross-sectional dimensions for electrical performance, while the buffer column provides stress absorption. This segmentation allows the conductive column to be manufactured with standard precision requirements without needing to be enlarged, thereby maintaining manufacturability while ensuring low contact resistance through proper material selection and interface design.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The introduction of the buffer column reduces the stress on the conductive column, enhancing the stability of the connection and maintaining a stable voltage supply by increasing the contact area and reducing contact resistance.
Implementation Method 1
at least one buffer column, spaced apart from the conductive column, in contact with the surface of the metal layer facing the upper electrode layer, and extending in a direction from the metal layer to the upper electrode layer
Data Source
AI summary
Embodiments provide a memory structure, including: a capacitive structure, provided with an upper electrode layer; a conductive column, arranged on the upper electrode layer, and in contact with and electrically connected to the upper electrode layer; a metal layer, arranged on a side of the conductive column away from the upper electrode layer, the conductive column being in contact with a surface of the metal layer facing the upper electrode layer; and at least one buffer column, spaced apart from the conductive column, in contact with the surface of the metal layer facing the upper electrode layer, and extending in a direction from the metal layer to the upper electrode layer.