Memory Module Connection Bump Layout for Heat Dissipation
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Solution Overview
Problem
Heat generated by high-speed semiconductor packages in memory modules causes performance degradation, necessitating improved heat dissipation solutions.
Innovation Solution
The introduction of first and second connection bumps with varying heights and widths on the module substrate, where the second connection bumps have a convexly shaped upper portion and a lower portion extending from the package substrate, enhancing heat dissipation without affecting electrical connectivity or process compatibility.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If high-speed semiconductor packages are used to increase data processing speed, then productivity is improved, but heat generation increases causing performance degradation
Solution Approach 1:
The connection bumps are divided into two distinct groups: first connection bumps for electrical connectivity and second connection bumps for heat dissipation. This segmentation allows each group to perform its specific function independently, enabling high-speed data processing while effectively managing the generated heat through separate thermal pathways.
Solution Approach 2:
The second connection bumps serve multiple functions: they provide thermal pathways for heat dissipation, maintain structural integrity of the package, and conform to international standards for ball grid arrays. This multi-functionality allows heat management to be integrated into the existing connection structure without adding separate cooling components.
2Temperature
If connection bumps are added to the module substrate to improve heat dissipation, then temperature control is improved, but device complexity increases
Solution Approach 1:
The heat dissipation function is merged with the existing connection bump structure by adding second connection bumps that share the same physical form and manufacturing process as the first connection bumps. This integration allows thermal management to be achieved without introducing fundamentally new components or complex assembly procedures, maintaining process compatibility while enhancing heat dissipation.
Solution Approach 2:
The second connection bumps are designed to conform to international standards for ball grid arrays, allowing them to serve both as standardized electrical connections and as thermal pathways. This universality reduces device complexity by using established, standardized components rather than custom-designed thermal management structures.
3Temperature
If second connection bumps with different dimensions are added to enhance heat dissipation, then heat dissipation is improved, but manufacturing precision requirements increase
Solution Approach 1:
The second connection bumps are designed with intentionally different dimensions (smaller diameter and/or height) compared to the first connection bumps. This parameter change optimizes the thermal conductivity and surface area for heat dissipation while still using the same manufacturing processes. The dimensional variations are controlled within standard manufacturing tolerances, avoiding excessive precision requirements.
Solution Approach 2:
Different regions of the package substrate are assigned different bump characteristics: the first group of connection bumps maintains standard dimensions for electrical connectivity, while the second group uses modified dimensions optimized for heat dissipation. This local differentiation allows each region to be optimized for its specific function without requiring universal high-precision manufacturing across all bumps.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively dissipates heat generated by semiconductor packages, maintaining module performance and reliability by utilizing dummy bumps that conform to international standards.
Implementation Method 1
Heat generated by a plurality of semiconductor packages operating at high speed may cause performance degradation of the memory module
Data Source
AI summary
A memory module, includes a module substrate and at least one semiconductor package on the module substrate that includes a package substrate having a lower surface and an upper surface. First and second groups of lower pads are on the lower surface, and upper pads are on the upper surface and are electrically connected to the lower pads of the first group. A chip structure is on the upper surface of the package substrate and is electrically connected to the upper pads. First connection bumps connect the lower pads of the first group to the module substrate, and second connection bumps connect the lower pads of the second group to the module substrate. The first connection bumps have a first maximum width at a first distance from the package substrate, and the second connection bumps have a second maximum width at a second, shorter distance from the package substrate.