Stacked Memory Chip Bump Interconnects for Reliable Signal Routing
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Solution Overview
Problem
Existing semiconductor memory devices face challenges in efficiently connecting memory chips and peripheral circuits, leading to signal transmission inefficiencies and potential reliability issues.
Innovation Solution
A semiconductor memory device design that includes a first memory chip and a second memory chip connected via bump electrodes, with a controller die for signal processing, and a package substrate for electrical connections, allowing for efficient signal transmission and improved reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If memory chips are connected via bump electrodes, then electrical connection reliability is improved, but manufacturing complexity increases
Solution Approach 1:
The patent divides the memory system into separate memory chips and peripheral circuit chips, each functioning as independent units connected through bump electrodes. This segmentation allows for specialized optimization of each component while maintaining reliable electrical connections through standardized bump electrode interfaces.
Solution Approach 2:
The bump electrodes serve as intermediary connection elements between the memory chips and peripheral circuit chip. These intermediaries provide robust electrical connections while enabling modular assembly, thus improving reliability without requiring direct complex integration between all components.
2Speed
If multiple chips are integrated in a package, then signal transmission efficiency is improved, but potential reliability issues increase
Solution Approach 1:
By segmenting the system into discrete chips (memory chips and peripheral circuit chip) rather than integrating everything into a single monolithic structure, the patent enables shorter signal paths within each chip while maintaining modular connectivity. This segmentation reduces signal transmission delays and improves efficiency while allowing individual chips to be tested and validated separately, thereby managing reliability risks.
Data Source
AI summary
A semiconductor memory device includes first and second memory devices arranged in a first direction, and a plurality of first bump electrodes disposed between the first and the second memory devices. Each of the first and the second memory devices includes a first chip including a memory cell array and a plurality of first electrodes, a second chip including a peripheral circuit and a plurality of second electrodes, and a plurality of second bump electrodes disposed between the first and the second chips. The plurality of first bump electrodes electrically connect the plurality of first electrodes to the plurality of second electrodes. The plurality of second bump electrodes electrically connect the memory cell array to the peripheral circuit in the first and the second memory devices.