Memory System Burst Mode Management Information Transfer
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Solution Overview
Problem
Current memory systems, such as solid-state drives (SSDs) using NAND flash memory, face inefficiencies in read operations due to the need for frequent access to management information stored in slower memory types, which hampers performance.
Innovation Solution
A memory system architecture that includes a faster dynamic random access memory (DRAM) for storing management information related to read processes, allowing for bulk transmission of necessary data in burst mode, thereby reducing access times and enhancing read performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If management information is stored in slower memory types (NAND flash), then storage capacity is improved, but read access speed deteriorates
Solution Approach 1:
The patent segments management information into two categories: frequently accessed management information stored in fast DRAM, and less frequently accessed management information stored in slow NAND flash memory. This segmentation allows the system to maintain high storage capacity while ensuring fast access to critical management data needed for read operations.
Solution Approach 2:
The patent introduces DRAM as an intermediary memory between the host and NAND flash memory. This intermediary stores management information that requires frequent access, acting as a buffer that mediates between the high-speed access requirements and the slow storage medium, thereby improving overall read performance without sacrificing storage capacity.
2Reliability
If management information is frequently accessed from slower memory, then data integrity is maintained, but operational efficiency deteriorates
Solution Approach 1:
The patent performs preliminary action by pre-loading management information into DRAM before it is needed for read operations. The memory controller transfers management information from NAND flash to DRAM in advance, so that when read operations occur, the management information is already available in fast memory, maintaining data integrity while improving operational efficiency.
Solution Approach 2:
The patent ensures continuity of useful action by maintaining management information in DRAM during active read operations. Instead of repeatedly accessing NAND flash for each read operation, the system keeps the necessary management information continuously available in DRAM, eliminating access interruptions and improving productivity while ensuring data integrity.
3Measurement precision
If multiple access operations are performed on management information, then read accuracy is improved, but access time increases
Solution Approach 1:
The patent merges multiple access operations into a single efficient access pattern by storing management information in DRAM. Instead of performing multiple separate access operations on NAND flash for the same management information, the system loads the information once into DRAM and performs all necessary reads from there, maintaining read accuracy while significantly reducing total access time.
Data Source
AI summary
According to one embodiment, a memory system includes a first memory, a second memory, a third memory, a data transmission controller, and a processing unit. The second memory is configured to store first management information to manage the first memory. The third memory is configured to be accessed at a speed higher than the second memory. The processing unit causes the data transmission controller to transmit second management information and third management information from the second memory to the third memory in a burst mode before a read process is performed on the first memory. The second management information and the third management information are related to the read process and are included in the first management information. The processing unit performs the read process on the first memory using the second management information and the third management information stored in the third memory.