Integrated Memory Assembly With Conductive Capacitor Bridges
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Solution Overview
Problem
It is challenging to achieve high-conductivity coupling between laterally-extending capacitors and source/drain regions of access devices in memory configurations, which affects the performance of memory cells in integrated assemblies.
Innovation Solution
The implementation of metal/metal silicide conductive bridges between capacitor electrodes and source/drain regions of access devices, forming conductive connections that enhance electrical coupling, thereby improving the conductivity and performance of memory cells.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional memory configurations are used, then device complexity is reduced, but electrical conductivity between capacitors and source/drain regions deteriorates
Solution Approach 1:
The patent introduces conductive bridges as intermediary structures between the capacitors and source/drain regions. These bridges provide a dedicated conductive pathway that improves electrical connectivity without requiring fundamental changes to the existing memory cell architecture, thus resolving the contradiction between maintaining simplicity and improving conductivity.
Solution Approach 2:
The conductive bridges are formed using composite material structures including metal layers, metal silicide layers, and barrier layers. This composite approach enables high conductivity while maintaining compatibility with standard semiconductor fabrication processes, addressing both the conductivity improvement and device complexity concerns.
2Reliability
If laterally-extending capacitors are used, then manufacturing simplicity is maintained, but coupling conductivity with source/drain regions deteriorates
Solution Approach 1:
The coupling structure is segmented into distinct functional layers: barrier layers, metal layers, and metal silicide layers. This segmentation allows each layer to be optimized for its specific function (adhesion, conductivity, diffusion barrier) while maintaining compatibility with lateral capacitor fabrication processes, thus improving coupling conductivity without significantly complicating manufacturing.
Solution Approach 2:
The conductive bridges extend in the vertical dimension beneath the lateral capacitors, creating a three-dimensional coupling structure. This adds a vertical conductive pathway that complements the lateral capacitor geometry, improving coupling conductivity while using fabrication techniques similar to conventional processes.
Data Source
AI summary
Some embodiments include an integrated assembly having first and second source/drain regions laterally offset from one another. Metal silicide is adjacent to lateral surfaces of the source/drain regions. Metal is adjacent to the metal silicide. Container-shaped first and second capacitor electrodes are coupled to the source/drain regions through the metal silicide and the metal. Capacitor dielectric material lines interior surfaces of the container-shaped first and second capacitor electrodes, A shared capacitor electrode extends vertically between the first and second capacitor electrodes, and extends into the lined first and second capacitor electrodes. Some embodiments include methods of forming integrated assemblies.