3D Memory Capacitor Electrode Layout for Higher Capacitance Density
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Solution Overview
Problem
Current three-dimensional (3D) semiconductor memory devices face challenges in achieving high-density integration and increasing capacitance within a limited area, which affects their operational efficiency and storage capacity.
Innovation Solution
The semiconductor memory device incorporates a gate stack structure with interlayer insulating layers and conductive patterns, a channel structure penetrating the gate stack, a peripheral contact plug, and capacitors with specific electrode configurations and dielectric layers to enhance capacitance and storage density, including a first capacitor electrode with a groove and a second capacitor electrode on the dielectric layer, filling the groove.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If the capacitor area is increased to achieve higher capacitance, then the storage density improves, but the available area for other components decreases
Solution Approach 1:
The capacitor electrode transitions from a planar structure to a three-dimensional structure by extending vertically along the channel structure. The first capacitor electrode is formed on the sidewall of the channel structure and extends in the vertical direction, while the second capacitor electrode is formed on the first capacitor electrode, creating a stacked configuration that increases capacitance without occupying additional planar area.
2Quantity of substance
If the capacitor area is increased to achieve higher capacitance, then the storage density improves, but the device complexity increases
Solution Approach 1:
The capacitor structure is merged with the channel structure by forming the first capacitor electrode on the sidewall of the channel structure. This integration allows the capacitor to utilize the vertical space around the channel, reducing the need for separate capacitor regions and simplifying the overall device layout while maintaining high capacitance.
3Productivity
If the manufacturing process is simplified to reduce production time, then the productivity improves, but the manufacturing precision may deteriorate
Solution Approach 1:
The first capacitor electrode is formed on the sidewall of the channel structure before the second capacitor electrode is formed on the first capacitor electrode. This preliminary formation of the first electrode provides a stable foundation and alignment reference for subsequent processing steps, ensuring precise positioning of the second electrode and maintaining manufacturing precision throughout the multi-step process.
Data Source
AI summary
A semiconductor memory device, and a method of manufacturing the same, includes: a gate stack structure including interlayer insulating layers and conductive patterns stacked in a first direction; a channel structure penetrating the gate stack structure; a peripheral contact plug spaced apart from the gate stack structure on a plane intersecting the channel structure, the peripheral contact plug extending in the first direction; and a capacitor spaced apart from the gate stack structure and the peripheral contact plug on the plane, the capacitor having an area wider than an area of the peripheral contact plug.