Semiconductor Memory Device Capacitor Insulation
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Solution Overview
Problem
Existing semiconductor memory devices face challenges in efficiently manufacturing memory cell arrays due to complex processes and high loads, particularly in ensuring electrical insulation between NAND strings and source lines.
Innovation Solution
The semiconductor memory device incorporates a capacitor that electrically insulates the NAND string from the source line, simplifying the manufacturing process by eliminating the need for direct conduction between the semiconductor film and the source line.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If direct conduction between semiconductor film and source line is implemented, then electrical connection is achieved, but manufacturing complexity increases due to complex film stack removal steps
Solution Approach 1:
The patent introduces a capacitor as an intermediary component between the NAND string and the source line. This capacitor includes a first electrode connected to the NAND string, a second electrode connected to the source line, and an insulating film between them. The intermediary capacitor structure eliminates the need for complex film stack removal steps while ensuring reliable electrical connection and insulation.
Solution Approach 2:
The patent segments the electrical connection path by introducing a capacitor with separate electrodes and insulating layers. Instead of direct conduction requiring complex film removal, the connection is divided into discrete components (first electrode, insulating film, second electrode) that can be manufactured independently and assembled systematically.
2Reliability
If complex film stack removal steps are performed, then direct conduction is achieved, but manufacturing load and process time increase
Solution Approach 1:
The patent performs preliminary action by forming the capacitor structure (electrodes and insulating film) before finalizing the electrical connection. This preliminary capacitor formation eliminates the need for subsequent complex film stack removal steps, thereby reducing manufacturing load and improving productivity.
Solution Approach 2:
The capacitor serves as a pre-formed intermediary structure that establishes the electrical connection without requiring complex removal steps. The insulating film and electrodes are prepared in advance, allowing for more efficient manufacturing processes.
3Reliability
If capacitor structure with insulating film is used, then electrical insulation is ensured, but device structure complexity increases
Solution Approach 1:
The insulating film acts as an intermediary layer between the first and second electrodes of the capacitor. This thin insulating barrier provides reliable electrical insulation while adding minimal structural complexity compared to alternative approaches requiring complex film stack removal.
Solution Approach 2:
The capacitor structure utilizes composite materials comprising conductive electrodes and insulating films in a layered configuration. This composite structure achieves reliable electrical insulation through the combination of different material properties, managing complexity through material selection rather than structural elaboration.
Data Source
AI summary
According to one embodiment, a semiconductor memory device includes: a first bit line; a capacitor; and a first memory cell transistor and a second memory cell transistor that are coupled in series between the first bit line and the capacitor.