3D Memory Capacitor Layout for Signal Isolation and Faster I/O
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Solution Overview
Problem
Semiconductor memory devices face challenges in increasing data storage capacity and improving input/output speed while managing signal noise effectively.
Innovation Solution
The semiconductor memory device incorporates a mold structure with stacked gate electrodes, a gate electrode cutting pattern, and capacitor structures that are arranged in specific directions to enhance signal isolation and improve input/output quality and speed.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If capacitor structures are increased in capacity to remove signal noise, then signal quality is improved, but device area increases
Solution Approach 1:
The patent transitions from two-dimensional planar capacitor structures to three-dimensional vertically stacked capacitor structures. Multiple capacitor structures are arranged in the vertical direction (first direction) to increase total capacitance while maintaining a compact footprint on the substrate, thereby improving signal quality without proportionally increasing device area.
Solution Approach 2:
The capacitor structures are nested within the mold structure, with multiple capacitor structures positioned at different heights and locations within the three-dimensional mold. This nested arrangement maximizes the use of vertical space to achieve high capacitance in a compact volume.
2Object-affected harmful factors
If gate electrodes are cut into multiple blocks to improve signal isolation, then signal noise control is improved, but device complexity increases
Solution Approach 1:
The mold structure is segmented into multiple blocks by cutting the gate electrodes along a plane. This segmentation isolates different regions of the device, preventing signal noise from propagating between blocks while maintaining manageable complexity through regular, repeating patterns.
Solution Approach 2:
The gate electrode cutting pattern serves multiple functions: it isolates signal noise between blocks, defines block boundaries for capacitor structure placement, and creates a modular architecture that simplifies manufacturing. This multi-functionality reduces overall device complexity despite the segmentation.
3Quantity of substance
If three-dimensional memory cells are implemented to increase storage capacity, then data storage capacity is improved, but manufacturing precision requirements increase
Solution Approach 1:
The three-dimensional memory device is divided into multiple blocks with regular, repeating structures. This segmentation allows for modular manufacturing where each block can be fabricated using the same precise processes, making the overall high-capacity device achievable through replication of well-controlled unit structures.
Solution Approach 2:
The patent uses vertical stacking of gate electrodes and capacitor structures in the third dimension to increase storage capacity. By transitioning from two-dimensional to three-dimensional arrangement, high density is achieved while maintaining manufacturability through vertical processing techniques that are well-established in semiconductor fabrication.
Data Source
AI summary
A semiconductor memory device includes a mold structure including a plurality of gate electrodes, a gate electrode cutting pattern separating the mold structure into a plurality of blocks by cutting the plurality of gate electrodes along a plane, within a first block being at least one block among the plurality of blocks, a plurality of first capacitor structures penetrating the mold structure, a plurality of second capacitor structures penetrating the mold structure within the first block, a first capacitor connection structure on the first block, and connected to the plurality of first capacitor structures, and a second capacitor connection structure on the first block, is connected to the plurality of second capacitor structures. A first signal line connected to the first capacitor connection structure and a second signal line connected to the second capacitor connection structure are electrically separated.