Semiconductor Memory Cell Layout With Air Gaps for Capacitance Control
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Solution Overview
Problem
Existing semiconductor devices face challenges in achieving high integration and improved electrical characteristics to meet the demands of high-speed operation and low power consumption.
Innovation Solution
The semiconductor device incorporates a substrate with bit lines, semiconductor patterns, word lines, and connection structures, featuring gaps and air gaps between connection structures to reduce unnecessary capacitance and increase contact area, thereby enhancing electrical performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If connection structures are placed closer together to increase integration, then device integration is improved, but capacitance between adjacent structures increases causing electrical disturbances
Solution Approach 1:
An air gap is introduced as an intermediary element between adjacent connection structures. This air gap acts as a mediator that reduces the capacitance coupling between the structures while maintaining their physical proximity for high integration. The air gap serves as an insulating barrier that minimizes electrical disturbance without requiring the structures to be spaced far apart.
2Reliability
If contact area between connection structures and semiconductor patterns is increased to improve electrical characteristics, then electrical performance is improved, but device area increases reducing integration density
Solution Approach 1:
The connection structure is designed with a vertical protrusion that extends downward into the semiconductor pattern. This dimensional change from a purely horizontal contact to a vertical protrusion contact increases the contact area and improves electrical characteristics without significantly increasing the horizontal device area. The protrusion utilizes the vertical dimension to achieve better electrical connection within a compact footprint.
Data Source
AI summary
A semiconductor device includes a substrate, a bit line on the substrate extending in a first direction parallel to an upper surface of the substrate, a first semiconductor pattern and a second semiconductor pattern on the bit line, each extending in a second direction perpendicular to the upper surface of the substrate, and spaced apart from each other in the first direction, a word line between the first semiconductor pattern and the second semiconductor pattern extending in the second direction, a first connection structure on one end portion of the first semiconductor pattern, a second connection structure on one end portion of the second semiconductor pattern, a data storage pattern on each of the first connection structure and the second connection structure, and a gap between the first connection structure and the second connection structure.