3D Memory Cell Alignment via Hole Position Correction
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Solution Overview
Problem
The existing manufacturing methods for three-dimensional nonvolatile memory devices face challenges in achieving precise alignment and overlapping of memory cells, leading to reduced operational reliability and increased manufacturing complexity.
Innovation Solution
A method involving the formation of first and second stack structures with strategically shifted holes, allowing for the calculation of correction values to adjust the position of subsequent holes, thereby improving the alignment and overlapping of memory cells through a precise measurement and correction process.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If existing manufacturing methods are used for three-dimensional nonvolatile memory devices, then the manufacturing process can be completed, but the alignment and overlapping of memory cells are imprecise, leading to reduced operational reliability
Solution Approach 1:
The patent implements a feedback mechanism by measuring the actual positions of first holes in the first stack structure, calculating correction values based on these measurements, and using these correction values to adjust the positions of second holes in the second stack structure. This closed-loop feedback process ensures precise alignment and overlapping of memory cells across multiple stacks, directly resolving the technical contradiction between reliability and manufacturing precision.
Solution Approach 2:
The patent applies preliminary action by first forming the first stack structure with first holes at predetermined positions, measuring their actual positions, and calculating correction values before forming the second stack structure. This preliminary measurement and correction preparation enables subsequent stacks to be formed with improved alignment precision, addressing the contradiction between operational reliability and manufacturing precision.
2Productivity
If existing manufacturing methods are used, then memory devices can be produced, but the manufacturing complexity increases due to alignment challenges
Solution Approach 1:
The feedback mechanism of measuring actual hole positions and calculating correction values provides a systematic approach to managing alignment complexity. By automatically computing correction values based on measurements, the method reduces manual intervention and simplifies the manufacturing process while maintaining high precision, thus improving productivity without excessively increasing device complexity.
Solution Approach 2:
The patent replaces complex mechanical alignment systems with a measurement and calculation-based approach. Instead of relying on purely mechanical positioning methods that are difficult to control, the invention uses position measurement, mathematical correction value calculation, and adjusted hole formation, which are more controllable and easier to automate, thereby improving manufacturing efficiency.
3Manufacturing precision
If precise alignment is achieved through multiple measurement and correction steps, then manufacturing precision improves, but the manufacturing process becomes more complex
Solution Approach 1:
The preliminary measurement and correction value calculation performed on the first stack structure serves as a template for subsequent stacks. By establishing the correction values early in the process, the method enables consistent alignment precision across multiple stacks without repeating the full measurement and correction sequence for each stack, thus improving precision while managing process complexity.
Solution Approach 2:
The correction values calculated from the first stack structure are applied universally to guide the formation of second holes in the second stack structure and subsequent stacks. This universal application of correction values maintains high alignment precision across multiple manufacturing steps while avoiding the need for separate complex alignment procedures for each stack, thereby reducing overall process complexity.
Data Source
AI summary
A method of manufacturing a semiconductor device includes: forming a first stack structure; forming first holes penetrating the first stack structure; forming a second stack structure on the first stack structure; forming second holes penetrating the second stack structure; measuring first direction distances between edges of the first holes and edges of the second holes; and correcting a first direction position at which the second holes are to be formed. The second holes may include one of a first shift hole shifted in a positive first direction from a first hole and a second shift hole shifted in a negative first direction from a first hole.