Memory Cell Capacitor with Segmented Support Structures
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Solution Overview
Problem
As semiconductor devices are developed for high integration, there is a need for capacitors with high capacitance in a limited area, and existing technologies face challenges in achieving high aspect ratios for capacitors while maintaining structural stability and minimizing leakage current.
Innovation Solution
A semiconductor device design featuring a capacitor with a plurality of bottom electrodes extending vertically, supported by upper and lower support patterns, and a top electrode that fills the spaces between them, along with a dielectric layer, which includes recesses in the electrodes to reduce leakage current through etching processes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If the aspect ratio of the capacitor bottom electrode is increased to achieve higher capacitance, then the capacitance increases, but the structural stability deteriorates and leakage current increases
Solution Approach 1:
The support structure is divided into multiple segments: lower support patterns, upper support patterns, and middle support patterns positioned at different heights. This segmentation allows each support segment to provide localized stability without requiring the entire structure to be overly robust, thus maintaining structural integrity while preserving the high aspect ratio of the bottom electrode for high capacitance.
Solution Approach 2:
The patent introduces middle support patterns positioned at intermediate heights between the lower and upper support patterns, adding a vertical dimension to the support structure. This multi-level vertical arrangement provides structural reinforcement at multiple heights, enabling the bottom electrode to maintain a high aspect ratio without compromising structural stability.
2Quantity of substance
If the aspect ratio of the capacitor bottom electrode is increased to achieve higher capacitance, then the capacitance increases, but the leakage current increases
Solution Approach 1:
The lateral surfaces of the bottom electrode are divided into multiple segments along the vertical direction, with dielectric layers and support patterns positioned at different heights. This segmentation creates multiple electrical isolation barriers that prevent leakage current paths, allowing the electrode to maintain a high aspect ratio for high capacitance while minimizing leakage through the segmented insulation structure.
Solution Approach 2:
Dielectric layers are introduced as intermediary materials between conductive components at different heights. These dielectric intermediaries provide electrical isolation that blocks leakage current paths, enabling the bottom electrode to achieve high aspect ratio and high capacitance without suffering from increased leakage current.
3Object-generated harmful factors
If the width between support patterns is reduced to minimize leakage current, then the leakage current decreases, but the manufacturing precision requirements increase
Solution Approach 1:
The support structure is segmented into lower, middle, and upper support patterns positioned at different heights. This vertical segmentation allows the lateral width between support patterns to be relatively large at each level while still providing effective leakage current blocking through the combination of multiple support elements and dielectric layers, thereby reducing manufacturing precision requirements compared to a single-level tight-spacing design.
Solution Approach 2:
The patent moves the leakage current blocking function from a purely lateral arrangement to a multi-level vertical arrangement. By positioning support patterns and dielectric layers at different heights, the design achieves leakage current minimization through vertical stacking rather than requiring extremely tight lateral spacing, thus reducing manufacturing precision requirements.
Data Source
AI summary
A semiconductor device includes a memory cell storing data. The memory cell capacitor includes a plurality of bottom electrodes on a substrate and extending in a vertical direction with respect to a top surface of the substrate, the plurality of bottom electrodes being spaced apart from each other in a first direction parallel to the top surface of the substrate, an upper support pattern on upper lateral surfaces of the plurality of bottom electrodes, and a lower support pattern on lower lateral surfaces of the plurality of bottom electrodes. The lower support pattern is disposed between the substrate and the upper support pattern, and a first bottom electrode of the plurality of bottom electrodes includes a first recess adjacent to a bottom surface of the lower support pattern.